Design strategies and insights of flexible infrared optoelectronic sensors

Y Liang, W Ran, D Kuang, Z Wang - Journal of Semiconductors, 2025 - iopscience.iop.org
Infrared optoelectronic sensing is the core of many critical applications such as night vision,
health and medication, military, space exploration, etc. Further including mechanical …

Review of carrier thermalization mechanisms in II-VI QDs and their potential application as the absorber in hot carrier solar cells

Y Zhang, R Wang, H Yang, J Zhang… - Solar Energy Materials …, 2024 - Elsevier
The hot carrier solar cell (HCSC) aims to completely utilize the thermalization energy loss to
boost the power conversion efficiency (PCE), where its key components are hot carrier …

Selective photocatalytic degradation of organic pollutants by CuxS/ZnO/TiO2 heterostructures

L Isac, L Andronic, M Visa, A Enesca - Ceramics International, 2020 - Elsevier
Photoactive heterostructures containing Cu x S/ZnO/TiO 2 have been obtained by spray
pyrolysis deposition followed by post-deposition thermal treatment. The ZnO middle layer …

[PDF][PDF] Research Progress of 2–5 μm Mid-Infrared GaSb Semiconductor Materials

P Yu, D Fang, J Tang, X Fang, D Wang, X Wang… - Appl. Phys, 2018 - pdf.hanspub.org
III-V group semiconductors have received a great deal of attention because of their potential
advantages for use in optoelectronic and electronic applications. Among these materials …

Investigation of localized state emissions in quaternary InGaAsSb/AlGaAsSb multiple quantum wells grown by molecular beam epitaxy

H Jia, L Shen, X Li, Y Kang, X Fang, D Fang… - Optical Materials …, 2020 - opg.optica.org
As an essential structure of infrared semiconductor lasers, the optical properties of
InGaAsSb/AlGaAsSb multiple quantum wells need to be fully investigated. In this paper, the …

The molecular beam epitaxy growth of InGaAsSb/AlGaAsSb quantum well on GaAs substrate with emission wavelength of∼ 2μm

H Jia, J Tang, L Shen, Y Kang, X Hou… - Journal of Physics …, 2021 - iopscience.iop.org
Abstract InGaAsSb layers and InGaAsSb/AlGaAsSb quantum wells nearly lattice-matched to
GaSb were grown by solid-source molecular beam epitaxy on GaAs substrates. As 2 and Sb …