Semiconductor field effect devices (FEDs) have become ubiquitous in everyday life due to
their widespread applications. However, their stability in challenging environments such as …

The newly developed nanoscale vacuum devices have basic functions similar to traditional
vacuum tubes, but can be manufactured by existing silicon-based process lines to achieve …

Nano air channel transistors (NACTs) provide numerous advantages over traditional silicon
devices, including faster switching speeds, higher operating frequencies, and enhanced …

Nanoscale air channel transistors (NACTs) have received significant attention due to their
remarkable high‐frequency performance and high switching speed, which is enabled by the …

In space applications, electronics must function while being strongly radiated. In this work,
the radiation hardness property of the planar two-terminal nanoscale air channel device …

Field-emission nanodiodes with air-gap channels based on single β-Ga2O3 nanowires
have been investigated in this work. With a gap of∼ 50 nm and an asymmetric device …

Due to its unique structure, discoveries in nanoscale vacuum channel transistors (NVCTs)
have demonstrated novel vacuum nanoelectronics. In this paper, the structural parameters …

In this letter, sub-10-nm air channel devices were fabricated with the aid of photolithography
and focused ion beam (FIB) etching. Field emission (FE) properties of the device were …

As electronics advance toward higher performance and adaptability in extreme
environments, traditional metal‐oxide‐semiconductor field‐effect transistors (MOSFETs) …

Recent discoveries in the field of nanoscale vacuum channel (NVC) structures have led to
potential on-chip electron sources. However, limited research has reported on the structure …