[HTML][HTML] The effect of porosity on strain evolution and failure of soldered, small-diameter, thin-walled metallic pipes
Small-diameter, thin-walled pipes have applications in a wide range of industries including
high-energy physics, heat transfer, nuclear, medical and communications. There are no …
high-energy physics, heat transfer, nuclear, medical and communications. There are no …
Efficiency-optimized monolithic frequency stabilization of high-power diode lasers
High-power GaAs-based diode lasers produce optical energy with extremely high
efficiencies, but their spectrum is too broad for many applications (4–5 nm with 95% power …
efficiencies, but their spectrum is too broad for many applications (4–5 nm with 95% power …
Degree of polarization of luminescence from InP under SiN stripes: fits to FEM simulations
DT Cassidy, and Jean-Pierre Landesman - Optics Continuum, 2023 - opg.optica.org
Fits of 3D finite element method (FEM) simulations to the degree of polarization (DOP) of
photoluminescence (PL) measured on facets under SiN stripes on InP substrates are …
photoluminescence (PL) measured on facets under SiN stripes on InP substrates are …
Degree of polarization of luminescence from GaAs and InP as a function of strain: a theoretical investigation
DT Cassidy, JP Landesman - Applied optics, 2020 - opg.optica.org
Experimentally, it is known that the degree of polarization (DOP) of luminescence is a
sensitive function of strain in III–V materials. It has been assumed that DOP=− K_e (e_1 …
sensitive function of strain in III–V materials. It has been assumed that DOP=− K_e (e_1 …
Degree of polarization of photoluminescence from facets of InP as a function of strain: some experimental evidence
DT Cassidy, SKK Lam - Applied Optics, 2021 - opg.optica.org
Previous work demonstrated a good fit to the degree of polarization (DOP) of luminescence
measurements on 110 facets of InP using a simple dependence of DOP of luminescence on …
measurements on 110 facets of InP using a simple dependence of DOP of luminescence on …
Bonding stress and reliability of low-polarization quantum-well superluminescent diode
ZH Yan, S Zhou - Physica E: Low-dimensional Systems and …, 2019 - Elsevier
Mechanical stress induced by bonding low-polarization GaAsP/AlGaAs quantum-well
superluminescent diodes with p-side-up and p-side-down bonding methods has been …
superluminescent diodes with p-side-up and p-side-down bonding methods has been …
Rotation of principal axes and birefringence in III-V lasers owing to bonding strain
DT Cassidy - Applied Optics, 2013 - opg.optica.org
Measurements of the degree of polarization (DOP) of photoluminescence from the facets of
bonded III-V semiconductor diode laser chips show shear strain. The effect of shear strain on …
bonded III-V semiconductor diode laser chips show shear strain. The effect of shear strain on …
Strain estimation in III–V materials by analysis of the degree of polarization of luminescence
DT Cassidy, CK Hall, O Rehioui, L Bechou - Microelectronics Reliability, 2010 - Elsevier
The degree of polarization (DOP) of luminescence of III–V materials is a sensitive function of
the strain in the material. The DOP can be measured with a spatial resolution of roughly 1μm …
the strain in the material. The DOP can be measured with a spatial resolution of roughly 1μm …
GaAs-based laser diode bonding-induced stress investigation by means of simulation and Degree of Polarization of photoluminescence measurements
J LeClecH, DT Cassidy, M Biet… - … , Mechanical & Multi …, 2010 - ieeexplore.ieee.org
GaAs-based single-mode laser diode bonding-induced stress has been investigated by the
means of both simulation and Degree of Polarization of photoluminescence (DoP) …
means of both simulation and Degree of Polarization of photoluminescence (DoP) …