Chemical and structural stability of 2D layered materials
X Wang, Y Sun, K Liu - 2D Materials, 2019 - iopscience.iop.org
Abstract Two-dimensional (2D) layered materials have attracted intensive interests in the
past decade. Their unique electronic, magnetic, optical, and mechanical properties render …
past decade. Their unique electronic, magnetic, optical, and mechanical properties render …
Quantized Faraday and Kerr rotation and axion electrodynamics of a 3D topological insulator
Topological insulators have been proposed to be best characterized as bulk
magnetoelectric materials that show response functions quantized in terms of fundamental …
magnetoelectric materials that show response functions quantized in terms of fundamental …
Progress in Epitaxial Thin‐Film Na3Bi as a Topological Electronic Material
Abstract Trisodium bismuthide (Na3Bi) is the first experimentally verified topological Dirac
semimetal, and is a 3D analogue of graphene hosting relativistic Dirac fermions. Its …
semimetal, and is a 3D analogue of graphene hosting relativistic Dirac fermions. Its …
Surface‐Driven Evolution of the Anomalous Hall Effect in Magnetic Topological Insulator MnBi2Te4 Thin Films
Understanding the effects of the interfacial modification to the functional properties of
magnetic topological insulator thin films is crucial for developing novel technological …
magnetic topological insulator thin films is crucial for developing novel technological …
[HTML][HTML] Topological materials by molecular beam epitaxy
Topology appears across condensed matter physics to describe a wide array of phenomena
which could alter, augment, or fundamentally change the functionality of many technologies …
which could alter, augment, or fundamentally change the functionality of many technologies …
Optimization of the Growth of the Van der Waals Materials Bi2Se3 and (Bi0.5In0.5)2Se3 by Molecular Beam Epitaxy
The naturally existing chalcogenide Bi2Se3 is topologically nontrivial due to the band
inversion caused by the strong spin-orbit coupling inside the bulk of the material. The …
inversion caused by the strong spin-orbit coupling inside the bulk of the material. The …
Solution to the Hole-Doping Problem and Tunable Quantum Hall Effect in Bi2Se3 Thin Films
Bi2Se3, one of the most widely studied topological insulators (TIs), is naturally electron-
doped due to n-type native defects. However, many years of efforts to achieve p-type Bi2Se3 …
doped due to n-type native defects. However, many years of efforts to achieve p-type Bi2Se3 …
Finite-Size and Composition-Driven Topological Phase Transition in (Bi1–xInx)2Se3 Thin Films
In a topological insulator (TI), if its spin–orbit coupling (SOC) strength is gradually reduced,
the TI eventually transforms into a trivial insulator beyond a critical point of SOC, at which …
the TI eventually transforms into a trivial insulator beyond a critical point of SOC, at which …
Van der Waals epitaxy of topological insulator Bi2Se3 on single layer transition metal dichalcogenide MoS2
We report the growth of high quality topological insulator Bi 2 Se 3 thin films on a single
layer, transitional metal dichalcogenide MoS 2 film via van der Waals epitaxy in a planar …
layer, transitional metal dichalcogenide MoS 2 film via van der Waals epitaxy in a planar …
[HTML][HTML] Synthesis and resistivity of topological metal MoP nanostructures
Due to the increased surface to volume ratios, topological nanomaterials can enhance
contributions from the topological surface states in transport measurements, which is critical …
contributions from the topological surface states in transport measurements, which is critical …