On 29 December 1959 at the annual meeting of the American Physical Society, Richard
Feynman gave a lecture at the California Institute of Technology titled" There Is Plenty of …

We present a procedure for calibrated complex impedance measurements and dielectric
quantification with scanning microwave microscopy. The calibration procedure works in situ …

Probing conductivity in a contactless way with nanoscale resolution is a pressing demand in
such active fields as quantum materials, superconductivity, and molecular electronics. Here …

We quantified the electric permittivity of single bacterial cells at microwave frequencies and
nanoscale spatial resolution by means of near-field scanning microwave microscopy. To this …

It is now possible to create atomically thin regions of dopant atoms in silicon patterned with
lateral dimensions ranging from the atomic scale (angstroms) to micrometers. These …

We achieved the lowest contact resistance between a-IGZO and a metal electrode for> 30
GHz operation of an oxide semiconductor device. For high-resolution display and high …

We present a new method to extract resistivity and doping concentration of semiconductor
materials from Scanning Microwave Microscopy (SMM) S11 reflection measurements. Using …

THz scattering-type scanning near-field microscopy (s-SNOM) has become a powerful
technique for measuring carrier dynamics in nanoscale materials and structures. Changes in …

We report on an adjustable interferometric set-up for Scanning Microwave Microscopy. This
interferometer is designed in order to combine simplicity, a relatively flexible choice of the …

Optimizing new generations of two-dimensional devices based on van der Waals materials
will require techniques capable of measuring variations in electronic properties in situ and …