Mechanical activation in mechanical removal of GaN using diamond tip and
mechanochemical removal using Al 2 O 3 tip are described by the Archard equation and …

Molecular dynamics simulations are carried out to investigate the nano abrasive machining
of monocrystalline gallium nitride (GaN). Effects of the cutting velocity, depth of cut (DOC) …

Nano-grinding is an essential step in ultra-precision machining for brittle material
semiconductor workpieces in order to improve the surface quality and preserve strength …

Single crystal gallium nitride (GaN) substrates are highly demanded for fabricating
advanced optoelectronic devices. It is thus essential to develop high efficiency machining …

Surface nanotribological properties and subsurface damage of flat and textured gallium
nitride (GaN) substrates during both linear and circular nanoscratching processes are …

Gallium nitride (GaN) is a hard and brittle single crystal and shaping it into thin substrates for
semiconductor applications is challenging. The quality of the machined surface can vary …

A series of three-dimensional molecular dynamics (MD) simulations was performed to
investigate the effect of temperature on the nanoscale deformation behaviour and …

Molecular dynamics (MD) were utilized to explore the damage of gallium nitride (GaN) in
nanogrinding at a wide range of initial temperature (100–1000 K). The focus is on the …

In order to investigate the tribological property of the gallium nitride (GaN) crystal at the
nanoscale, a series of molecular dynamics nanoscratch simulations are carried out on the …

Molecular dynamics simulations were used to explore the effect of abrasive size on the nano
abrasive machining for wurtzite gallium nitride (GaN) single crystal. The deformation …