Aluminium nitride integrated photonics: a review
Integrated photonics based on silicon has drawn a lot of interests, since it is able to provide
compact solution for functional devices, and its fabrication process is compatible with the …
compact solution for functional devices, and its fabrication process is compatible with the …
Dawn of nitride ferroelectric semiconductors: from materials to devices
III-nitride semiconductors are promising optoelectronic and electronic materials and have
been extensively investigated in the past decades. New functionalities, such as …
been extensively investigated in the past decades. New functionalities, such as …
Fully epitaxial ferroelectric ScAlN grown by molecular beam epitaxy
We report on the demonstration of ferroelectricity in ScxAl1-xN grown by molecular beam
epitaxy on GaN templates. Distinct polarization switching is unambiguously observed for …
epitaxy on GaN templates. Distinct polarization switching is unambiguously observed for …
A review of the recent applications of aluminum nitride-based piezoelectric devices
Piezoelectric materials have attracted considerable attention over the last two decades
because many technologies utilize their core properties of piezoelectric materials. Previous …
because many technologies utilize their core properties of piezoelectric materials. Previous …
NDIR CO2 gas sensing using CMOS compatible MEMS ScAlN-based pyroelectric detector
We demonstrate NDIR CO 2 gas sensing using CMOS compatible MEMS ScAlN-based
pyroelectric detectors. The ScAlN-based pyroelectric detectors are fabricated using 8-inch …
pyroelectric detectors. The ScAlN-based pyroelectric detectors are fabricated using 8-inch …
Compensation of the Stress Gradient in Physical Vapor Deposited Al1−xScxN Films for Microelectromechanical Systems with Low Out-of-Plane Bending
Thin film through-thickness stress gradients produce out-of-plane bending in released
microelectromechanical systems (MEMS) structures. We study the stress and stress gradient …
microelectromechanical systems (MEMS) structures. We study the stress and stress gradient …
[PDF][PDF] 高热导电绝缘氮化铝陶瓷在宇航器件中的应用: 概述, 挑战和展望
何端鹏， 黄雪吟， 任刚， 汪洋， 于翔天， 李岩， 邢焰… - 硅酸盐学报, 2022 - researching.cn
氮化铝(AlN) 陶瓷具有高热导, 高电阻, 低介电损耗, 低膨胀以及良好的力学性能等特性,
可用作高性能导热基板和陶瓷封装材料. 本工作评述了AlN 粉体及陶瓷的制备技术 …
可用作高性能导热基板和陶瓷封装材料. 本工作评述了AlN 粉体及陶瓷的制备技术 …
CMOS AlN and ScAlN Pyroelectric Detectors with Optical Enhancement for Detection of CO2 and CH4 Gases
Gas sensors are useful for monitoring of greenhouse gases. As the move toward
complementary metal‐oxide‐semiconductor (CMOS) compatible pyroelectric room …
complementary metal‐oxide‐semiconductor (CMOS) compatible pyroelectric room …
Molecular beam epitaxy and characterization of ferroelectric quaternary alloy Sc0. 2Al0. 45Ga0. 35N
In this study, we demonstrate ferroelectricity in high-quality monocrystalline quaternary alloy
ScAlGaN. Sc 0.2 Al 0.45 Ga 0.35 N films are grown by plasma-assisted molecular beam …
ScAlGaN. Sc 0.2 Al 0.45 Ga 0.35 N films are grown by plasma-assisted molecular beam …
CMOS compatible pyroelectric materials for infrared detectors
The pyroelectric materials offer good performance at room temperature because of their high
sensitivity and uniform spectral response in the wide infrared (IR) range. Out of various types …
sensitivity and uniform spectral response in the wide infrared (IR) range. Out of various types …