Apparatuses having memory cells with two transistors and one capacitor, and having body regions of the transistors coupled with reference voltages

KM Karda, C Mouli, S Pulugurtha… - US Patent 10,607,988, 2020 - Google Patents
Some embodiments include a memory cell with two tran sistors and one capacitor. The
transistors are a first transistor and a second transistor. The capacitor has a first node …

Memory cells comprising ferroelectric material and including current leakage paths having different total resistances

M Balakrishnan, BR Cook… - US Patent 10,396,145, 2019 - Google Patents
A memory cell comprises a capacitor having a first conductive capacitor electrode having
laterally-spaced walls that individually have a top surface. A second conductive capacitor …

Apparatuses having memory cells with two transistors and one capacitor, and having body regions of the transistors coupled with reference voltages

KM Karda, C Mouli, S Pulugurtha… - US Patent 10,381,357, 2019 - Google Patents
Some embodiments include a memory cell with two tran sistors and one capacitor. The
transistors are a first transistor and a second transistor. The capacitor has a first node …

Memory cells and methods of forming a capacitor including current leakage paths having different total resistances

M Mutch, AA Chavan, S Chhajed, BR Cook… - US Patent …, 2021 - Google Patents
A memory cell comprises a capacitor comprising a first capacitor electrode having laterally-
spaced walls, a second capacitor electrode comprising a portion above the first capacitor …

Integrated assemblies having transistor body regions coupled to carrier-sink-structures; and methods of forming integrated assemblies

KM Karda, H Liu, DVN Ramaswamy, Y Gao… - US Patent …, 2022 - Google Patents
Some embodiments include an integrated assembly having a carrier-sink-structure, and
having digit lines over the carrier-sink-structure. Transistor body regions are over the digit …

Integrated assemblies which include carbon-doped oxide, and methods of forming integrated assemblies

SD Tang, S Borsari, SH Cheung - US Patent 10,381,352, 2019 - Google Patents
Some embodiments include an integrated assembly having semiconductor material
structures which each have a transistor channel region, and which are over metal-containing …

Methods of forming an array of cross point memory cells

SE Sills, DVN Ramaswamy - US Patent 10,622,556, 2020 - Google Patents
(57) ABSTRACT A method of forming an array of cross point memory cells comprises
forming spaced conductive lower electrode pil lars for individual of the memory cells being …

Smart thermostat orchestration

PB Malcolm, MH Kerbel, P Stidworthy - US Patent 11,799,291, 2023 - Google Patents
Abstract Systems and methods for orchestrating the operation of energy-consuming loads,
so as to minimize power consumption, are described. In some embodiments, the loads can …

Integrated assemblies having transistor body regions coupled to carrier-sink-structures; and methods of forming integrated assemblies

KM Karda, H Liu, DVN Ramaswamy, Y Gao… - US Patent …, 2024 - Google Patents
Some embodiments include an integrated assembly having a carrier-sink-structure, and
having digit lines over the carrier-sink-structure. Transistor body regions are over the digit …

Memory cells

KM Karda, Q Tao, DVN Ramaswamy, H Liu… - US Patent …, 2023 - Google Patents
A memory cell includes a select device and a capacitor electrically coupled in series with the
select device. The capacitor includes two conductive capacitor electrodes having …