Electronic defects in amorphous oxide semiconductors: A review
Amorphous oxide semiconductors (AOSs) have been commercialized since 2012 as thin‐
film transistor (TFT) backplanes in flat‐panel displays. This review first provides a brief …
film transistor (TFT) backplanes in flat‐panel displays. This review first provides a brief …
A fully integrated ferroelectric thin‐film‐transistor–influence of device scaling on threshold voltage compensation in displays
D Lehninger, M Ellinger, T Ali, S Li… - Advanced Electronic …, 2021 - Wiley Online Library
Thin‐film transistors (TFTs) based on amorphous indium‐gallium‐zinc‐oxide (a‐IGZO) have
attracted vast attention for use in organic light‐emitting diode (AMOLED) displays due to …
attracted vast attention for use in organic light‐emitting diode (AMOLED) displays due to …
Enhanced performances of a-IGZO TFTs with oxide passivation layers fabricated by hollow cathode assisted PLD
C Wang, C Zeng, H Ning, F Li, M Liu, K Xu… - Journal of Alloys and …, 2023 - Elsevier
Pulsed laser deposition (PLD) and two-step thermal annealing are combined to fabricate
MgO, TiO 2, Y 2 O 3, Al 2 O 3, ZrO 2 and HfO 2 passivation layers on a-IGZO TFTs. The …
MgO, TiO 2, Y 2 O 3, Al 2 O 3, ZrO 2 and HfO 2 passivation layers on a-IGZO TFTs. The …
Evolution of defect structures and deep subgap states during annealing of amorphous In-Ga-Zn oxide for thin-film transistors
We investigate the evolution behavior of defect structures and the subgap states in In-Ga-Zn
oxide (IGZO) films with increasing postannealing temperature by means of extended x-ray …
oxide (IGZO) films with increasing postannealing temperature by means of extended x-ray …
Multiple roles of hydrogen treatments in amorphous in–Ga–Zn–O films
H Tang, Y Kishida, K Ide, Y Toda… - ECS Journal of Solid …, 2017 - iopscience.iop.org
The roles of hydrogen introduced by post-deposition hydrogen treatments were investigated
for amorphous In–Ga–Zn–O (a-IGZO) films using room-temperature hydrogen plasma (H …
for amorphous In–Ga–Zn–O (a-IGZO) films using room-temperature hydrogen plasma (H …
Influences of Oxygen Plasma Posttreatment on Electrical Characteristics of Amorphous Indium–Gallium–Zinc–Oxide Thin‐Film Transistors
JY Lee, G Tarsoly, SG Choi, HG Ryu… - physica status solidi …, 2021 - Wiley Online Library
A thin‐film transistor (TFT) using amorphous indium–gallium–zinc oxide (a‐IGZO) as an
active layer is annealed at 300° C after deposition and then treated with oxygen plasma. To …
active layer is annealed at 300° C after deposition and then treated with oxygen plasma. To …
[HTML][HTML] Plasma-enhanced atomic layer deposition of indium-free ZnSnOx thin films for thin-film transistors
An appropriate synthesis technique for growing high-quality indium-free ZnSnO x (ZTO) films
should be developed to achieve high-performance thin-film transistors (TFTs) utilizing ZTO …
should be developed to achieve high-performance thin-film transistors (TFTs) utilizing ZTO …
Effects of water and hydrogen introduction during In–Ga–Zn–O sputtering on the performance of low-temperature processed thin-film transistors
Y Magari, M Furura - Japanese Journal of Applied Physics, 2021 - iopscience.iop.org
Abstract In–Ga–Zn–O (IGZO) films were deposited by sputtering in Ar+ O 2+ H 2 and Ar+ H 2
O atmosphere to investigate the effects of H 2 and H 2 O introduction on physical and …
O atmosphere to investigate the effects of H 2 and H 2 O introduction on physical and …
Multiple Color Inorganic Thin‐Film Phosphor, RE‐Doped Amorphous Gallium Oxide (RE = Rare Earth: Pr, Sm, Tb, and Dy), Deposited at Room Temperature
Multi‐color inorganic thin‐film phosphors are deposited at room temperature on glass
substrates using ultra‐wide bandgap amorphous gallium oxide (a‐GO) as a host material …
substrates using ultra‐wide bandgap amorphous gallium oxide (a‐GO) as a host material …
Reliable measurement of the density of states including occupied in-gap states of an amorphous In–Ga–Zn–O thin film via photoemission spectroscopies: Direct …
R Nakazawa, A Matsuzaki, K Shimizu… - Journal of Applied …, 2024 - pubs.aip.org
Illumination stress (IS) and negative bias under illumination stress (NBIS) cause
considerable device instability in thin-film transistors based on amorphous In–Ga–Zn–O (a …
considerable device instability in thin-film transistors based on amorphous In–Ga–Zn–O (a …