Progress, challenges, and opportunities in oxide semiconductor devices: a key building block for applications ranging from display backplanes to 3D integrated …

T Kim, CH Choi, JS Hur, D Ha, BJ Kuh, Y Kim… - Advanced …, 2023 - Wiley Online Library
As Si has faced physical limits on further scaling down, novel semiconducting materials such
as 2D transition metal dichalcogenides and oxide semiconductors (OSs) have gained …

Looking beyond 0 and 1: principles and technology of multi‐valued logic devices

M Andreev, S Seo, KS Jung, JH Park - Advanced Materials, 2022 - Wiley Online Library
Ever since the invention of solid‐state transistors, binary devices have dominated the
electronics industry. Although the binary technology links the natural property of devices to …

Demonstration of anti-ambipolar switch and its applications for extremely low power ternary logic circuits

Y Lee, S Kim, HI Lee, SM Kim, SY Kim, K Kim, H Kwon… - Acs Nano, 2022 - ACS Publications
Anti-ambipolar switch (AAS) devices at a narrow bias region are necessary to solve the
intrinsic leakage current problem of ternary logic circuits. In this study, an AAS device with a …

Demonstration of p-type stack-channel ternary logic device using scalable DNTT patterning process

Y Lee, H Kwon, SM Kim, HI Lee, K Kim, HW Lee… - Nano …, 2023 - Springer
A p-type ternary logic device with a stack-channel structure is demonstrated using an
organic p-type semiconductor, dinaphtho [2, 3-b: 2', 3'-f] thieno [3, 2-b] thiophene (DNTT). A …

Revealing three-in-one nature of organic negative transconductance transistors

HS Shin, H Yoo, CH Kim - IEEE Transactions on Electron …, 2022 - ieeexplore.ieee.org
Introducing a negative transconductance (NTC) regime into a switching curve of a field-effect
transistor is a promising approach to overcome the fundamental limit of traditional digital …

Step-like current–voltage thin-film transistors with amorphous SiZnSnO/SiInZnO/SiZnSnO multilayered-channels

B Murugan, SY Lee - Inorganic Chemistry Communications, 2022 - Elsevier
Multi-valued logic (MVL) is a critical approach for high-density information and next-
generation digital electronics. Recently developed multilayered-channel structure electronic …

Performance evaluation of scaled ZnO stacked nanosheet channel ternary field effect transistor

HI Lee, SY Kim, SM Kim, Y Lee, HW Lee… - IEEE Electron …, 2021 - ieeexplore.ieee.org
Ternary logic device technologies have been actively researched due to the potential
benefits such as lower power consumption, smaller device count, smaller area, and higher …

Novel approach for implementing ternary value logic devices showing negative differential transconductance characteristics by Fowler–Nordheim tunneling

J Kim, JW Lim - Materials Science in Semiconductor Processing, 2023 - Elsevier
Ternary value logic (TVL) devices are gaining attention owing to the limitations of binary
devices in handling the increasing amount of information. However, the development of …

Reconfigurable Binary and Ternary Logic Devices Enabling Logic State Modulation

JH Cho, Y Kwon, SB Park, Y Yoo, SW Lee - 2024 - researchsquare.com
This paper reports a reconfigurable binary–ternary transistor with a controllable voltage
range and current level for the intermediate logic state. The proposed functions were …

VDD scalability of complementary ternary stack channel transistor

K Kim, SY Kim, Y Lee, HW Lee, H Kwon… - 2022 IEEE Silicon …, 2022 - ieeexplore.ieee.org
Recently, ternary stack channel transistors have been experimentally demonstrated with a
stable intermediate state, one of the most important traits for ternary logic applications. In this …