Embodiments of the invention include a method of forming a nonvolatile memory device that
contains a resistive switching memory element that has improved device switching …

Building programmable resistive devices in contact holes at the crossover of a plurality of
conductor lines in more than two vertical layers is disclosed. There are plurality of first …

US PATENT DOCUMENTS 2004O160812 A1 8/2004 Rinerson et al. 2004/0160817 A1
8/2004 Rinerson et al. 4,204,028 A 5/1980 Donley 2004/0160818 A1 8/2004 Rinerson et al …

FET technologies can be used as program selectors or One Time Programmable (OTP)
element in a programmable resis tive device. Such as interconnect fuse, contact/via fuse …

2,655,609 A 10/1953 Shockley 2.971, 140 A 12/1959 Chappey et al. 3,796,926 A 3, 1974
Cole et al. 4,204,028 A 5/1980 Donley 4499, 557 A 2/1985 Holmberg et al. 4,646,266 A …

A memory cell is described, the memory cell comprising a dielectric rupture antifuse and a
layer of a resistivity-switching material arranged electrically in series, wherein the resistivity …

A method and system for multiple-bit programmable resistive cells having a multiple-bit
programmable resistive element and using diode as program selector are disclosed. The …

In-system repairing or configuring faulty memories after being used in a system. In one
embodiment, a memory chip can include at least one OTP memory to store defective …

Techniques, systems and circuitry for using One-Time Programmable (OTP) memories to
function as a Multiple-Time Programmable (MTP) memory. The OTP-for-MTP memory can …

In some aspects, a method of forming a memory cell is pro vided that includes (1) forming a
first conductor above a Substrate;(2) forming a reversible resistance-switching ele ment …