Two 4-bit active phase shifters integrated with all digital control circuitry in 0.13-μm RF
CMOS technology are developed for X-and K u-band (8–18 GHz) and K-band (18–26 GHz) …

Integration of mm-wave multiple-antenna systems on silicon-based processes enables
complex, low-cost systems for high-frequency communication and sensing applications. In …

Seven years ago research in the? eld of mm-wave silicon was virtually non-existent. Fewpeoplethoughtthatoperationat60GHzwa…
. Inthecourseofsevenyearsthe topichastransitionedfromanobscureresearc… to an exciting …

A local-oscillator phase-shifting approach is introduced to implement a fully integrated 24-
GHz phased-array receiver using SiGe technology. Sixteen phases of the local oscillator are …

This paper demonstrates an 8-element phased array receiver in a standard 0.18-mum SiGe
BiCMOS (1P6M, SiGe HBT ft ap 150 GHz) technology for X-and Ku-band applications. The …

This paper presents the design and analysis of an improved wideband in-phase/quadrature
(I/Q) network and its implementation in a wideband phased-array front-end. It is found that …

This paper presents the first fully integrated 24-GHz phased-array transmitter designed
using 0.18-/spl mu/m CMOS transistors. The four-element array includes four on-chip CMOS …

We present a graphene-based phase shifter for radio-frequency (RF) phase-array
applications. The core of the designed phase-shifting system consists of a graphene field …

This paper presents a 10-bit wideband Cartesian phase rotator with a novel linear digital
VGA implemented in a 0.13 um CMOS process. The VGA topology is robust to device …

This paper presents a CMOS vector-sum-based phase shifter with a flat group-delay
deviation of 6.3 ps at K-band. The theoretical analyses confirm the effects of the nonideal …