Cross-point architecture for spin-transfer torque magnetoresistive random access memory with spin orbit writing
A magnetic memory cell includes: a first spin-orbit interaction active layer; a first magnetic
free layer on the first spin-orbit interaction active layer, the first magnetic free layer having a …
free layer on the first spin-orbit interaction active layer, the first magnetic free layer having a …
Method and system for providing a magnetic junction usable in spin transfer torque applications using multiple stack depositions
MT Krounbi, DW Erickson, X Tang… - US Patent …, 2018 - Google Patents
A method for providing magnetic junctions is described. Each magnetic junction includes a
free layer. A first portion of a stack for the magnetic junctions is provided. The first portion of a …
free layer. A first portion of a stack for the magnetic junctions is provided. The first portion of a …
Magnetic memory
M Ishikawa, Y Kato, Y Saito, S Oikawa… - US Patent …, 2019 - Google Patents
(57) ABSTRACT A magnetic memory of an embodiment includes: first through third
terminals; a conductive layer including first through third portions, the first portion being …
terminals; a conductive layer including first through third portions, the first portion being …
Magnetic memory cell with asymmetrical geometry programmable by application of current in the absence of a magnetic field
G Gaudin, IM Miron, O Boulle, SC Hiyil… - US Patent …, 2019 - Google Patents
US10224085B2 - Magnetic memory cell with asymmetrical geometry programmable by
application of current in the absence of a magnetic field - Google Patents US10224085B2 …
application of current in the absence of a magnetic field - Google Patents US10224085B2 …
Scalable spin-orbit torque (SOT) magnetic memory
S Araki - US Patent 10,658,021, 2020 - Google Patents
A magnetic storage device includes a plurality of first wires extending along a first direction
and a plurality of second wires extending along a second direction different from the first …
and a plurality of second wires extending along a second direction different from the first …
Structure and formation method of semiconductor device with magnetic element
CC Chen, WL Huang, CC Kuo, HL Huang… - US Patent …, 2020 - Google Patents
A structure and a formation method of a semiconductor device are provided. The method
includes forming an adhesive layer over a semiconductor substrate and forming a magnetic …
includes forming an adhesive layer over a semiconductor substrate and forming a magnetic …
Spin-orbit torque (SOT) magnetic memory with voltage or current assisted switching
S Araki - US Patent 10,600,465, 2020 - Google Patents
(57) ABSTRACT A magnetic storage device includes a first wire extending along a first
direction and a plurality of spin orbit torque magnetic random access memory (SOT-MRAM) …
direction and a plurality of spin orbit torque magnetic random access memory (SOT-MRAM) …
Process for manufacturing scalable spin-orbit torque (SOT) magnetic memory
S Araki - US Patent 10,930,843, 2021 - Google Patents
A method of fabricating a magnetic storage device includes depositing a first conductive
material. The method further includes electrically isolating distinct instances of the first …
material. The method further includes electrically isolating distinct instances of the first …
Antiferromagnet and heavy metal multilayer magnetic systems for switching magnetization using spin-orbit torque
A magnetic system containing a plurality of stacked layer arrays, each of which includes a
first anti-ferromagnetic (AFM1) layer, a heavy metal (HM) layer formed of a material having …
first anti-ferromagnetic (AFM1) layer, a heavy metal (HM) layer formed of a material having …