Photoacoustic and modulated reflectance studies of indirect and direct band gap in van der Waals crystals
SJ Zelewski, R Kudrawiec - Scientific Reports, 2017 - nature.com
Photoacoustic (PA) and modulated reflectance (MR) spectroscopy have been applied to
study the indirect and direct band gap for van der Waals (vdW) crystals: dichalcogenides …
study the indirect and direct band gap for van der Waals (vdW) crystals: dichalcogenides …
[HTML][HTML] Electromodulation spectroscopy of highly mismatched alloys
R Kudrawiec, W Walukiewicz - Journal of Applied Physics, 2019 - pubs.aip.org
The electronic band structure of highly mismatched alloys (HMAs) was very successfully
explored using electromodulation (EM) spectroscopy, ie, photoreflectance (PR) …
explored using electromodulation (EM) spectroscopy, ie, photoreflectance (PR) …
Fermi level and bands offsets determination in insulating (Ga, Mn) N/GaN structures
The Fermi level position in (Ga, Mn) N has been determined from the period-analysis of GaN-
related Franz-Keldysh oscillation obtained by contactless electroreflectance in a series of …
related Franz-Keldysh oscillation obtained by contactless electroreflectance in a series of …
Nitrogen-related intermediate band in P-rich GaNxPyAs1−x−y alloys
The electronic band structure of phosphorus-rich GaNxPyAs1− x− y alloys (x~ 0.025 and y≥
0.6) is studied experimentally using optical absorption, photomodulated transmission …
0.6) is studied experimentally using optical absorption, photomodulated transmission …
Electric fields and surface fermi level in undoped GaN/AlN two‐dimensional hole gas heterostructures
Undoped GaN/AlN heterostructures with a high‐density 2D hole gas (2DHG) have recently
been reported, demonstrating that holes can be generated in GaN without magnesium (Mg) …
been reported, demonstrating that holes can be generated in GaN without magnesium (Mg) …
Temperature dependence of energy gap of Ge1− xSnx alloys with x< 0.11 studied by photoreflectance
Abstract Compressively strained Ge 1− x Sn x layers of various Sn content grown on Ge/Si
templates have been studied by photoreflectance in 15–295 K temperature range. It has …
templates have been studied by photoreflectance in 15–295 K temperature range. It has …
Photoreflectance studies of optical transitions in GaNPAs intermediate band solar cell absorbers
Photoreflectance spectroscopy is used to study optical properties of GaNPAs for the
intermediate band (IB) solar cell absorbers. The IB is created in GaNPAs by the …
intermediate band (IB) solar cell absorbers. The IB is created in GaNPAs by the …
Optical investigation of voltage losses in high-efficiency Cu (In, Ga) Se2 thin-film solar cells
M Wolter - 2019 - orbilu.uni.lu
The increases in power conversion efficiencies up to 23.35% in thin-film Cu (In, Ga) Se2
(CIGS) solar cells in recent years can mainly be ascribed to the alkali post-deposition …
(CIGS) solar cells in recent years can mainly be ascribed to the alkali post-deposition …
Direct evidence of photoluminescence broadening enhancement by local electric field fluctuations in polar InGaN/GaN quantum wells
M Baranowski, Ł Janicki, M Gladysiewicz… - Japanese Journal of …, 2018 - iopscience.iop.org
In this work the effect of external electric field on the broadening of optical transitions in a
triple polar InGaN/GaN quantum well is studied. Experimental investigation using …
triple polar InGaN/GaN quantum well is studied. Experimental investigation using …