[HTML][HTML] High crystalline quality homoepitaxial Si-doped β-Ga2O3 (010) layers with reduced structural anisotropy grown by hot-wall MOCVD
D Gogova, DQ Tran, V Stanishev… - Journal of Vacuum …, 2024 - pubs.aip.org
A new growth approach, based on the hot-wall metalorganic chemical vapor deposition
concept, is developed for high-quality homoepitaxial growth of Si-doped single-crystalline β …
concept, is developed for high-quality homoepitaxial growth of Si-doped single-crystalline β …
[HTML][HTML] Different substrate structures affect the substitution efficiency of Al atoms in AlxGa1− xN epitaxial films
R Wang, H Ao, JF Yan, Y Liu - AIP Advances, 2024 - pubs.aip.org
Through XRD analysis and xrayutilities fitting, this paper investigates the structural
parameters of Al x Ga 1− x N (AlGaN) epitaxial layers grown on both free-standing GaN (FS …
parameters of Al x Ga 1− x N (AlGaN) epitaxial layers grown on both free-standing GaN (FS …
[PDF][PDF] Development of thick GaN and AlGaN drift layers for vertical power devices
A Dhora - 2023 - lup.lub.lu.se
High-quality, thick III-nitride epitaxial drift layers with controlled doping are needed for next-
generation highly efficient vertical power devices for a smart grid applications and …
generation highly efficient vertical power devices for a smart grid applications and …