Silicon offers multiple advantages to power circuit designers, but at the same time suffers
from limitations that are inherent to silicon material properties, such as low bandgap energy …

Silicon carbide (SiC) offers significant advantages for power-switching devices because the
critical field for avalanche breakdown is about ten times higher than in silicon. SiC power …

Despite silicon carbide's (SiC's) high breakdown electric field, high thermal conductivity and
wide bandgap, it faces certain reliability challenges when used to make conventional power …

The need for power semiconductor devices with high-voltage, high-frequency, and high-
temperature operation capability is growing, especially for advanced power conversion and …

During the last 30 years, significant progress has been made to improve our understanding
of gallium nitride and silicon carbide device structures, resulting in experimental …

The first high voltage npn bipolar junction transistors (BJTs) in 4H-SiC have been
demonstrated. The BJTs were able to block 1800 V in common emitter mode and showed a …

WIDE BANDGAP semiconductor, particularly Silicon Carbide (SiC), based electronic
devices and circuits are presently being developed for use in high-temperature, high-power …

Pole-to-pole DC faults on HB-MMC-VSC-HVDC schemes impose significant risk of cascade
failure on IGBT/diode pairs. Other novel topologies with fault blocking capability, ie AAC …

Evolutionary improvements in silicon (Si) power devices through better device designs,
processing techniques, and material quality have led to great advancements in power …

Compact models of wide-bandgap power devices are necessary to analyze and evaluate
their impact on circuit and system performance. Part I reviewed compact models for silicon …