2D semiconductor FETs—Projections and design for sub-10 nm VLSI
Two-dimensional (2D) crystal semiconductors, such as the well-known molybdenum
disulfide (MoS 2), are witnessing an explosion in research activities due to their apparent …
disulfide (MoS 2), are witnessing an explosion in research activities due to their apparent …
A compact current–voltage model for 2D semiconductor based field-effect transistors considering interface traps, mobility degradation, and inefficient doping effect
This paper presents an analytical current-voltage model specifically formulated for 2-
dimensional (2D) transition metal dichalcogenide (TMD) semiconductor based field-effect …
dimensional (2D) transition metal dichalcogenide (TMD) semiconductor based field-effect …
Compact models and the physics of nanoscale FETs
MS Lundstrom, DA Antoniadis - IEEE Transactions on Electron …, 2013 - ieeexplore.ieee.org
The device physics of nanoscale MOSFETs is related to traditional compact models.
Beginning with the virtual source model, a model for nanoscale MOSFETs expressed in …
Beginning with the virtual source model, a model for nanoscale MOSFETs expressed in …
Performance comparisons of III–V and strained-Si in planar FETs and nonplanar FinFETs at ultrashort gate length (12 nm)
SH Park, Y Liu, N Kharche, MS Jelodar… - … on Electron Devices, 2012 - ieeexplore.ieee.org
The exponential miniaturization of Si complementary metal–oxide–semiconductor
technology has been a key to the electronics revolution. However, the downscaling of the …
technology has been a key to the electronics revolution. However, the downscaling of the …
An improved virtual-source-based transport model for quasi-ballistic transistors—Part I: Capturing effects of carrier degeneracy, drain-bias dependence of gate …
S Rakheja, MS Lundstrom… - IEEE Transactions on …, 2015 - ieeexplore.ieee.org
In this paper, an improved physics-based virtual-source (VS) model to describe transport in
quasi-ballistic transistors is discussed. The model is based on the Landauer scattering …
quasi-ballistic transistors is discussed. The model is based on the Landauer scattering …
Analysis of carrier transport in short-channel MOSFETs
A Majumdar, DA Antoniadis - IEEE Transactions on Electron …, 2014 - ieeexplore.ieee.org
A method for extracting transport parameters in short-channel FETs is presented in the
context of the Lundstrom model for quasi-ballistic short-channel FETs. The parameters …
context of the Lundstrom model for quasi-ballistic short-channel FETs. The parameters …
3-D full-band Monte Carlo simulation of hot-electron energy distributions in gate-all-around Si nanowire MOSFETs
The energy distributions of electrons in gate-all-around (GAA) Si MOSFETs are analyzed
using full-band 3-D Monte Carlo (MC) simulations. Excellent agreement is obtained with …
using full-band 3-D Monte Carlo (MC) simulations. Excellent agreement is obtained with …
Theoretical study of the gate leakage current in sub-10-nm field-effect transistors
MV Fischetti, B Fu… - IEEE Transactions on …, 2013 - ieeexplore.ieee.org
Scaling field-effect transistors (FETs) with conventional semiconductor channels requires a
reduction of the body or fin thickness or of the diameter of the nanowire (NW) channel. We …
reduction of the body or fin thickness or of the diameter of the nanowire (NW) channel. We …
Effective mobility in nanowire FETs under quasi-ballistic conditions
E Gnani, A Gnudi, S Reggiani… - IEEE transactions on …, 2009 - ieeexplore.ieee.org
In this paper, we investigate the electron mobility in nanowire (NW) FETs operating under
quasi-ballistic conditions. Starting from a general expression of the current-voltage …
quasi-ballistic conditions. Starting from a general expression of the current-voltage …
Contact resistances in trigate and FinFET devices in a non-equilibrium Green's functions approach
We compute the contact resistances R c in trigate and FinFET devices with widths and
heights in the 4–24 nm range using a Non-Equilibrium Green's Functions approach …
heights in the 4–24 nm range using a Non-Equilibrium Green's Functions approach …