A 0.096-mm –20-GHz Triple-Path Noise- Canceling Common-Gate Common-Source LNA With Dual Complementary pMOS–nMOS Configuration
This article proposes a novel wideband commongate (CG) common-source (CS) low-noise
amplifier (LNA) with a dual complementary pMOS-nMOS configuration to provide a current …
amplifier (LNA) with a dual complementary pMOS-nMOS configuration to provide a current …
A Low-Phase-Noise and Wide-Tuning-Range CMOS/IPD Transformer-Based VCO With High of −206.8 dBc/Hz
S Wang, PH Chen - IEEE Transactions on Components …, 2015 - ieeexplore.ieee.org
This paper presents a low-phase-noise and wide-tuning-range voltage-controlled oscillator
(VCO) implemented in a standard 0.18-μm complementary metal-oxide-semiconductor …
(VCO) implemented in a standard 0.18-μm complementary metal-oxide-semiconductor …
CMOS/IPD switchable bandpass circuit for 28/39 GHz fifth‐generation applications
S Wang, KF Cho - IET Microwaves, Antennas & Propagation, 2016 - Wiley Online Library
This study presents a switchable bandpass circuit using a standard 0.18 μm complementary
metal‐oxide semiconductor (CMOS) and an integrated passive device (IPD) technology for …
metal‐oxide semiconductor (CMOS) and an integrated passive device (IPD) technology for …
A 0.1–20.1-GHz Wideband Noise-Canceling -Boosted CMOS LNA With Gain-Reuse
MA Karami, M Lee, R Mirzavand… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
This article presents a novel wideband low-noise amplifier (LNA) topology that incorporates
noise cancellation in a-boosted common gate (CG) LNA by reusing the inverting amplifier …
noise cancellation in a-boosted common gate (CG) LNA by reusing the inverting amplifier …
Low-noise and high-linearity wideband CMOS receiver front-end stacked with glass integrated passive devices
RF Ye, TS Horng, JM Wu - IEEE transactions on microwave …, 2014 - ieeexplore.ieee.org
This paper presents a stacked RF front-end (RFE) package for wideband receiver
applications. While having a power consumption of 18 mW, the flipped CMOS chip …
applications. While having a power consumption of 18 mW, the flipped CMOS chip …
An Ultra-Compact 0.5˜ 3.6-GHz CMOS VCO with High-Q Active Inductor
JC Huang, NS Yang, S Wang - 2019 European Microwave …, 2019 - ieeexplore.ieee.org
In this letter, an ultra-compact and wide-tuning-range voltage-controlled oscillator (VCO)
with high-Q active inductor is designed, implemented, and verified in a standard 0.18-μm …
with high-Q active inductor is designed, implemented, and verified in a standard 0.18-μm …
Systematic analysis of linearization techniques for wideband RF low-noise amplifier
NK Patel, HP Koringa - Advances in VLSI and Embedded Systems: Select …, 2022 - Springer
Recent advances in the field of RF front end design have replaced multiple narrowband Low-
Noise Amplifiers (LNA) with one wideband LNA to support a variety of bands and standards …
Noise Amplifiers (LNA) with one wideband LNA to support a variety of bands and standards …
A 0.75–2.5-GHz All-Digital RF Transmitter With Integrated Class-E Power Amplifier for Spectrum Sharing Applications in 5G Radios
I Raja, G Banerjee - IEEE Transactions on Very Large Scale …, 2020 - ieeexplore.ieee.org
We propose a digitally intensive, reconfigurable RF transmitter with an integrated, tunable
Class-E power amplifier (PA) which can be configured to operate from 0.75 to 2.5 GHz in …
Class-E power amplifier (PA) which can be configured to operate from 0.75 to 2.5 GHz in …
Wideband RF front-end transceiver with integrated phase-locked loop
YJ Chuang, FH Chung - 2016 Asia-Pacific Microwave …, 2016 - ieeexplore.ieee.org
This paper presents a wideband direct-conversion transceiver front-end implemented in
65nm CMOS technology. The receiver section consists of noise cancellation LNA, down …
65nm CMOS technology. The receiver section consists of noise cancellation LNA, down …
50 MHz–10 GHz Low‐Power Resistive Feedback Current‐Reuse Mixer with Inductive Peaking for Cognitive Radio Receiver
N Vitee, H Ramiah, WK Chong, GH Tan… - The Scientific World …, 2014 - Wiley Online Library
A low‐power wideband mixer is designed and implemented in 0.13 µm standard CMOS
technology based on resistive feedback current‐reuse (RFCR) configuration for the …
technology based on resistive feedback current‐reuse (RFCR) configuration for the …