Ferroelectric interfacial devices consist of materials systems whose interfacial electronic
properties (such as a 2D electron gas or an interfacial magnetic spin configuration) are …

Achieving high power conversion efficiencies (PCEs) in ferroelectric photovoltaics (PVs) is a
longstanding challenge. Although recently ferroelectric thick films, composite films, and bulk …

SrTiO3 remains at the core of research on oxide electronics, owing to its fascinating
properties and wide applications as a commercial substrate. Heterojunctions based on Nb …

Abstract Pb (Zr, Ti) O3 (PZT) is the most common ferroelectric (FE) material widely used in
solid‐state technology. Despite intense studies of PZT over decades, its intrinsic band …

Probing of the free surface ferroelectric properties of thin polar films can be achieved either
by estimating the band bending variance under the top-most layer or by studying the extent …

We investigate the effect of the nature of the substrate and the bottom interface on the out-of-
plane polarization orientation of ultrathin (10-nm) lead zirconate titanate (PZT) thin films of …

This article reports the influence of sintering temperature on the structural, dielectric and
ferroelectric properties of lead-free Ba 0.98 La 0.01 Na 0.01 TiO 3 ceramics synthesized by …

Polarization has a significant impact on chemical reactions, as demonstrated by recent
research of photo-/electrocatalytic water splitting, electrocatalytic CO2 reduction, water …

Fe (acceptor) and Nb (donor) doped epitaxial Pb (Zr0. 2Ti0. 8) O3 (PZT) films were grown on
single crystal SrTiO3 substrates and their electric properties were compared to those of un …

The polarization of PbZ r 0.52 T i 0.48 O 3 thin film is switched by changing film thickness
through the competition between the strain relaxation-induced flexoelectric fields and the …