Dye sensitized solar cells: a review
The development of dye sensitized solar cells (DSSCs), which have derived inspiration from
photosynthesis, has opened up exciting new possibilities and paradigms for producing solar …
photosynthesis, has opened up exciting new possibilities and paradigms for producing solar …
Novel magnetic nanomaterials inspired by magnetotactic bacteria: Topical review
Magnetotactic bacteria, known to produce magnetic nanocrystals with uniform shapes and
sizes at physiological conditions, serve as an inspiration and source of a number of …
sizes at physiological conditions, serve as an inspiration and source of a number of …
Magnetoelectric effects in local light-matter interactions
We study the generic dipole interaction of a monochromatic free-space electromagnetic field
with a bi-isotropic nanoparticle or a molecule. Contributions associated with the breaking of …
with a bi-isotropic nanoparticle or a molecule. Contributions associated with the breaking of …
Interfacial chemistry of oxides on InxGa (1− x) As and implications for MOSFET applications
The prospect of enhanced device performance from III–V materials has been recognized for
at least 50years, and yet, relative to the phenomenal size of the Si-based IC industry, these …
at least 50years, and yet, relative to the phenomenal size of the Si-based IC industry, these …
A Combined Interface and Border Trap Model for High-Mobility Substrate Metal–Oxide–Semiconductor Devices Applied to and InP Capacitors
By taking into account simultaneously the effects of border traps and interface states, the
authors model the alternating current capacitance-voltage (CV) behavior of high-mobility …
authors model the alternating current capacitance-voltage (CV) behavior of high-mobility …
Electrical study of sulfur passivated In0. 53Ga0. 47As MOS capacitor and transistor with ALD Al2O3 as gate insulator
In this paper we compare the interface trap distributions Dit (E) of sulfur treated Al2O3/In0.
53Ga0. 47As interfaces, which underwent MOS capacitor and transistor fabrication …
53Ga0. 47As interfaces, which underwent MOS capacitor and transistor fabrication …
Atomic layer deposition of dielectrics on Ge and III–V materials for ultrahigh performance transistors
The prospect of utilizing alternative transistor channel materials for ultrahigh performance
transistors will require suitable gate dielectrics for surface-channel field-effect devices. With …
transistors will require suitable gate dielectrics for surface-channel field-effect devices. With …
On the interface state density at In0. 53Ga0. 47As/oxide interfaces
The authors model the capacitance-voltage (CV) behavior of In 0.53 Ga 0.47 As metal-oxide-
semiconductor (MOS) structures and compare the results to experimental C V-curves. Due to …
semiconductor (MOS) structures and compare the results to experimental C V-curves. Due to …
Surface defects and passivation of Ge and III–V interfaces
M Houssa, E Chagarov, A Kummel - Mrs Bulletin, 2009 - cambridge.org
The need for high-κ gate dielectrics and metal gates in advanced integrated circuits has
reopened the door to Ge and III–V compounds as potential replacements for silicon …
reopened the door to Ge and III–V compounds as potential replacements for silicon …
0.8-V Supply Voltage Deep-Submicrometer Inversion-Mode MOSFET
We report the experimental demonstration of deep-submicrometer inversion-mode In 0.75
Ga 0.25 As MOSFETs with ALD high-k Al 2 O 3 as gate dielectric. In this letter, n-channel …
Ga 0.25 As MOSFETs with ALD high-k Al 2 O 3 as gate dielectric. In this letter, n-channel …