Fermi level unpinning achievement and transport modification in Hf1-xYbxOy/Al2O3/GaSb laminated stacks by doping engineering
L Hao, G He, S Jiang, Z Dai, G Zheng, J Lu… - Journal of Materials …, 2022 - Elsevier
Fermi level pinning and interface instability have hindered the achievement of field-effect-
transistors (FETs) with high performance. Interface passivation and doping engineering …
transistors (FETs) with high performance. Interface passivation and doping engineering …
Mechanical Properties of High Temperature Resistant Energy Storage Dielectric Materials and Radiation Scintillation Detection Composite Materials in Bridge …
J He - Integrated Ferroelectrics, 2022 - Taylor & Francis
With the rapid development and utilization of energy by human beings, the preparation of
high-efficiency energy storage materials has become a current hot spot. This article mainly …
high-efficiency energy storage materials has become a current hot spot. This article mainly …
[PDF][PDF] Impact of high-k insulators on electrical properties of junctionless double gate strained transistor
KE Kaharudin, F Salehuddin, ASM Zain… - Indonesian Journal of …, 2024 - researchgate.net
High-k dielectric insulators are required to reduce leakage and increase transistor
performance. They are able to impact the mobility of carriers in transistors positively, leading …
performance. They are able to impact the mobility of carriers in transistors positively, leading …
Design and Simulation of Bi-Layer Optimized High K-Dielectric Medium for N-Mosfet with Wild Horse Optimization to Improve Electrical Characteristics
RP Guru - ECS Journal of Solid State Science and Technology, 2024 - iopscience.iop.org
Electronic devices for advanced modern semiconductor based technology, mainly focus on
the design regarding lighter, faster and more affordable solutions to meet the specifications …
the design regarding lighter, faster and more affordable solutions to meet the specifications …
Comparison of VI characteristics between conventional MOSFET and novel nanoscale MOSFET based on its oxide thickness
SH Reddy, B Yakkala - AIP Conference Proceedings, 2024 - pubs.aip.org
The goal of the research is to improve the drain characteristics of a Metal Oxide
Semiconductor Field Effect Transistor (MOSFET) by reducing the oxide thickness from a bulk …
Semiconductor Field Effect Transistor (MOSFET) by reducing the oxide thickness from a bulk …
Comparison of VI characteristics between conventional MOSFET and novel nanoscale MOSFET using high K dielectric materials
SH Reddy, B Yakkala - AIP Conference Proceedings, 2024 - pubs.aip.org
The purpose of this study is to improve the drain current of a metal-oxide-semiconductor field-
effect transistor (MOSFET) by using nanotechnology to reduce the oxide thickness from bulk …
effect transistor (MOSFET) by using nanotechnology to reduce the oxide thickness from bulk …
Simulation and analysis of current transport characteristics for nanoscale MOSFET using novel Zn (Gao2) 2 material as dielectric insulator gate oxide compared with …
B Reddy, A Kinol - AIP Conference Proceedings, 2023 - pubs.aip.org
The aim of this work is to simulate and compare the current-voltage characteristics in Metal
Oxide Field Effect Transistors (MOSFET) with Zn (Gao2) 2 and ZrSiO4 gate oxides with …
Oxide Field Effect Transistors (MOSFET) with Zn (Gao2) 2 and ZrSiO4 gate oxides with …
Virtual fabrication in modelling 14 nm horizontal double gate bilayer graphene FET NMOS/PMOS
NH Naili, AH Afifah Maheran, F Salehuddin… - AIP Conference …, 2024 - pubs.aip.org
MOSFET has been the most widely utilized electronic appliance in integrated circuits (ICs)
since the beginning of the silicon-based semiconductor material (1970s). With the rapid …
since the beginning of the silicon-based semiconductor material (1970s). With the rapid …
Comparison of VI characteristics between MOSFET and BIOFET by varying channel length
R Rajasekhar, B Yakkala - AIP Conference Proceedings, 2023 - pubs.aip.org
The project aims to improve the drain characteristics of a novel device BIOFET (Bio Field
Effect Transistor) and MOSFET (Metal oxide semiconductor field effect transistor) by varying …
Effect Transistor) and MOSFET (Metal oxide semiconductor field effect transistor) by varying …
Analysis of Tunnelling Probability of Different High-K Material for Nanometer Thickness MOSFET Gate
AD Sarkar - Advances in VLSI, Communication, and Signal …, 2022 - Springer
Presently, various mathematical and experimental research are going on for the reduction of
the size of transistors for the improvement of the overall performance of electronic devices …
the size of transistors for the improvement of the overall performance of electronic devices …