Multi-layered insulating film stack
W Chieh-Ping, C Ting-Gang, BC Lu, TC Huang… - US Patent …, 2024 - Google Patents
A method for forming a semiconductor device includes: forming a gate structure over a fin,
where the fin protrudes above a substrate; forming an opening in the gate structure; forming …
where the fin protrudes above a substrate; forming an opening in the gate structure; forming …
Multi-layered insulating film stack
W Chieh-Ping, C Ting-Gang, BC Lu, TC Huang… - US Patent …, 2023 - Google Patents
US11823955B2 - Multi-layered insulating film stack - Google Patents US11823955B2 - Multi-layered
insulating film stack - Google Patents Multi-layered insulating film stack Download PDF Info …
insulating film stack - Google Patents Multi-layered insulating film stack Download PDF Info …
Multi-layered insulating film stack
W Chieh-Ping, C Ting-Gang, BC Lu, TC Huang… - US Patent …, 2022 - Google Patents
A method for forming a semiconductor device includes: forming a gate structure over a fin,
where the fin protrudes above a substrate; forming an opening in the gate structure; forming …
where the fin protrudes above a substrate; forming an opening in the gate structure; forming …
Single diffusion cut for gate structures
H Zang, R Xie, JM Dechene - US Patent 11,810,812, 2023 - Google Patents
US11810812B2 - Single diffusion cut for gate structures - Google Patents US11810812B2 -
Single diffusion cut for gate structures - Google Patents Single diffusion cut for gate …
Single diffusion cut for gate structures - Google Patents Single diffusion cut for gate …
Self-aligned contact
S Gu, SHU Jiehui, H Wang, S Yanping - US Patent 11,721,728, 2023 - Google Patents
The present disclosure relates to semiconductor structures and, more particularly, to self-
aligned contacts and methods of manufacture. The structure includes: adjacent diffusion …
aligned contacts and methods of manufacture. The structure includes: adjacent diffusion …