Electron trapping effects in SiC Schottky diodes: Review and comment
JR Nicholls - Microelectronics Reliability, 2021 - Elsevier
SiC devices exhibit a number of detrimental second order effects which are caused by
electrically active traps. The majority of studies into traps in SiC devices have been for SiC …
electrically active traps. The majority of studies into traps in SiC devices have been for SiC …
Lateral, Optically Controlled, Artificial Synapses Realized in Room-Temperature RF-Sputtered SnO2 for Neuromorphic Computing and Visual Recognition
Volatile lateral memristors fabricated from amorphous SnO2 have exhibited synaptic
properties including conductance modulation that depended on the number, width, and …
properties including conductance modulation that depended on the number, width, and …