Self-diffusion in silicon and the contribution of vacancies and self-interstitials have been
controversially discussed for 50 yr. Most recent results show that the intrinsic silicon self …

Since many years, the contribution of vacancies (V) and self-interstitials (I) to silicon (Si) self-
diffusion is a matter of debate. Native defects and their interaction among themselves and …

Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these
materials still demand research, eminently in view of the improvement of knowledge on …

Understanding mass transport in micro-and nanostructures is of paramount importance in
improving the performance and reliability of the micro-and nanostructures. In this work, we …

Atomic diffusion in semiconductors refers to the migration of atoms, including host, dopant
and impurities. Diffusion occurs in all thermodynamic phases, but the solid phase is the most …

High-intensity specular neutron reflectometry was used to measure atomic transport
processes in the solid state in-situ. As a model system, Li transport through ultrathin …

Amorphous Ge-Si solid solutions are an interesting class of materials from the fundamental
as well as the technological point of view. Self-diffusion of the constituents is an important …

6.1 Introduction.................................................................................................. 159 6.2 Diffusion in
Silicon...................................................................................... 161 6.2. 1 Self …

Abstract Broadening of the 28 Si, 29 Si isotope distribution in the subsurface layers of Si: B
single crystals under plastic deformation has been observed by secondary ion mass …

By applying the locally optimal rotation method to deal with the lowest eigenvalue of a
Hessian matrix, we have efficiently incorporated the hyperdynamics method into the ab initio …