Recent progress on the electronic structure, defect, and doping properties of Ga2O3
ABSTRACT Gallium oxide (Ga2O3) is an emerging wide bandgap semiconductor that has
attracted a large amount of interest due to its ultra-large bandgap of 4.8 eV, a high …
attracted a large amount of interest due to its ultra-large bandgap of 4.8 eV, a high …
Progress in state-of-the-art technologies of Ga2O3 devices
C Wang, J Zhang, S Xu, C Zhang, Q Feng… - Journal of Physics D …, 2021 - iopscience.iop.org
Abstract Gallium oxide (Ga 2 O 3), an emerging ultra-wide-bandgap semiconductor, has the
desirable properties of a large bandgap of 4.6–4.9 eV, an estimated critical breakdown field …
desirable properties of a large bandgap of 4.6–4.9 eV, an estimated critical breakdown field …
Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS
Gallium oxide (Ga2O3) is emerging as a viable candidate for certain classes of power
electronics with capabilities beyond existing technologies due to its large bandgap …
electronics with capabilities beyond existing technologies due to its large bandgap …
[HTML][HTML] Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage
Sn-doped gallium oxide (Ga 2 O 3) wrap-gate fin-array field-effect transistors (finFETs) were
formed by top-down BCl 3 plasma etching on a native semi-insulating Mg-doped (100) β-Ga …
formed by top-down BCl 3 plasma etching on a native semi-insulating Mg-doped (100) β-Ga …
[HTML][HTML] Toward emerging gallium oxide semiconductors: A roadmap
Owing to the advantages of ultra-wide bandgap and rich material systems, gallium oxide (Ga
2 O 3) has emerged as a highly viable semiconductor material for new researches. This …
2 O 3) has emerged as a highly viable semiconductor material for new researches. This …
Low density of interface trap states and temperature dependence study of Ga2O3 Schottky barrier diode with p-NiOx termination
This work acquires a vertical β-Ga 2 O 3 Schottky barrier diode (SBD) with the advanced
termination structure of p-type NiO x and n-type β-Ga 2 O 3 heterojunctions and coupled …
termination structure of p-type NiO x and n-type β-Ga 2 O 3 heterojunctions and coupled …
Recessed-Gate Enhancement-Mode -Ga2O3 MOSFETs
We report enhancement-mode-Ga 2 O 3 (BGO) MOSFETs on a Si-doped homoepitaxial
channel grown by molecular beam epitaxy. A gate recess process is used to partially …
channel grown by molecular beam epitaxy. A gate recess process is used to partially …
Electric‐Dipole Gated Two Terminal Phototransistor for Charge‐Coupled Device
The demand for charge‐coupled device (CCD) imagers has surged exponentially during the
last decade owing to their exceptionally high quality and low noise imaging. However, they …
last decade owing to their exceptionally high quality and low noise imaging. However, they …
Recent advances in free-standing single crystalline wide band-gap semiconductors and their applications: GaN, SiC, ZnO, β-Ga 2 O 3, and diamond
Free-standing single crystalline semiconductor membranes have gained intensive attention
over the last few years due to their versatile usage in many applications. This material …
over the last few years due to their versatile usage in many applications. This material …
Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs
As a promising ultra-wide bandgap semiconductor, the β-phase of Ga 2 O 3 has attracted
more and more interest in the field of power electronics due to its ultra-wide bandgap (4.8 …
more and more interest in the field of power electronics due to its ultra-wide bandgap (4.8 …