A 271.8 nm deep-ultraviolet laser diode for room temperature operation
Z Zhang, M Kushimoto, T Sakai… - Applied Physics …, 2019 - iopscience.iop.org
We present a deep-ultraviolet semiconductor laser diode that operates under current
injection at room temperature and at a very short wavelength. The laser structure was grown …
injection at room temperature and at a very short wavelength. The laser structure was grown …
[HTML][HTML] Status of the growth and fabrication of AlGaN-based UV laser diodes for near and mid-UV wavelength
In this article, the development of mid-UV laser diodes based on the AlGaN materials system
is reviewed. The targeted wavelength for these lasers covers the range from 200 to 350 nm …
is reviewed. The targeted wavelength for these lasers covers the range from 200 to 350 nm …
Ultralow-threshold electrically injected AlGaN nanowire ultraviolet lasers on Si operating at low temperature
Ultraviolet laser radiation has been adopted in a wide range of applications as diverse as
water purification, flexible displays, data storage, sterilization, diagnosis and bioagent …
water purification, flexible displays, data storage, sterilization, diagnosis and bioagent …
[HTML][HTML] High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates
The internal quantum efficiency (IQE) of Al 0.55 Ga 0.45 N/AlN and Al 0.55 Ga 0.45 N/Al 0.85
Ga 0.15 N UVC MQW structures was analyzed. The use of bulk AlN substrates enabled us to …
Ga 0.15 N UVC MQW structures was analyzed. The use of bulk AlN substrates enabled us to …
Continuous-wave lasing of AlGaN-based ultraviolet laser diode at 274.8 nm by current injection
Z Zhang, M Kushimoto, A Yoshikawa… - Applied Physics …, 2022 - iopscience.iop.org
We demonstrated continuous-wave lasing of an AlGaN-based ultraviolet laser diode,
fabricated on a single-crystal AlN substrate when operating at 5 C. The threshold current …
fabricated on a single-crystal AlN substrate when operating at 5 C. The threshold current …
The role of surface kinetics on composition and quality of AlGaN
Abstract Metal–polar, Al-rich AlGaN films were grown on both single crystalline AlN and
sapphire substrates. The role of surface morphology and surface kinetics on AlGaN …
sapphire substrates. The role of surface morphology and surface kinetics on AlGaN …
KOH based selective wet chemical etching of AlN, AlxGa1− xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode
A controllable and smooth potassium hydroxide-based wet etching technique was
developed for the AlGaN system. High selectivity between AlN and AlxGa1ÀxN (up to 12Â) …
developed for the AlGaN system. High selectivity between AlN and AlxGa1ÀxN (up to 12Â) …
Design and characterization of a low-optical-loss UV-C laser diode
Z Zhang, M Kushimoto, T Sakai… - Japanese Journal of …, 2020 - iopscience.iop.org
We present an optical modeling and characterization study of prototype ultraviolet laser
diode (LD) structures grown on single-crystal AlN substrates, with focus on the reduction of …
diode (LD) structures grown on single-crystal AlN substrates, with focus on the reduction of …
Recent progress on aluminum gallium nitride deep ultraviolet lasers by molecular beam epitaxy
Over the past decades, the aluminum gallium nitride (AlGaN) alloy system has received
wide interest for the development of semiconductor deep ultraviolet (DUV) lasers due to its …
wide interest for the development of semiconductor deep ultraviolet (DUV) lasers due to its …
[HTML][HTML] Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates
Optically pumped deep-ultraviolet (DUV) lasing with low threshold was demonstrated from
AlGaN-based multiple-quantum-well (MQW) heterostructures grown on sapphire substrates …
AlGaN-based multiple-quantum-well (MQW) heterostructures grown on sapphire substrates …