Recently, pulsed laser deposition (PLD) technology makes viable the epitaxial growth of
group III-nitrides on thermally active substrates at low temperature. The precursors …

The application of gas discharge plasmas has assumed an important place in many
manufacturing processes. Plasma methods contribute significantly to the economic …

A set of undoped Al x Ga 1− x N epilayers with different thicknesses were grown on (0001)
sapphire substrates using metal-organic chemical vapor deposition (MOCVD) technique …

In an earlier study micro-LED micro display (<; 1 inch) on silicon CMOS backplane was
demonstrated for augmented reality (AR) applications. Here we report the feasibility of wafer …

High performance of Ga-doped ZnO (GZO) prepared using metalorganic chemical vapor
deposition (MOCVD) was employed in GaN blue light-emitting diodes (LEDs) as transparent …

In this paper, the simple, rejection-based kinetic Monte Carlo simulation method is applied
for the approximate simulation of the etch rates and three-dimensional etch structures during …

Growth of hexagonal GaN on Si (100) templates via pulsed laser deposition (PLD) was
investigated for the further development of GaN-on-Si technology. The evolution of the GaN …

In this paper, a model of etch rates of crystallographic planes of sapphire based on step flow
mechanism is proposed, which explains the relationship between etch rates of and atomic …

Here we present a systematic study on crystallographic and topographical evolutions as well
as etching rates of crystallographic planes of cone-shaped patterned sapphire substrate …

In this paper, the Monte Carlo simulation for sapphire in wet etching is optimized, which
improves the accuracy and efficiency of simulated results. Firstly, an eight-index …