Role of oxygen vacancies in ferroelectric or resistive switching hafnium oxide
HfO2 shows promise for emerging ferroelectric and resistive switching (RS) memory devices
owing to its excellent electrical properties and compatibility with complementary metal oxide …
owing to its excellent electrical properties and compatibility with complementary metal oxide …
On the strong coupling of polarization and charge trapping in HfO2/Si-based ferroelectric field-effect transistors: overview of device operation and reliability
Ferroelectric field-effect transistors (FeFETs) have become an attractive technology for
memory and emerging applications on a silicon electronic platform after the discovery of the …
memory and emerging applications on a silicon electronic platform after the discovery of the …
Sub-Nanosecond Switching of Si:HfO2 Ferroelectric Field-Effect Transistor
The discovery of ferroelectric doped HfO2 enabled the emergence of scalable and CMOS-
compatible ferroelectric field-effect transistor (FeFET) technology which has the potential to …
compatible ferroelectric field-effect transistor (FeFET) technology which has the potential to …
Ferroelectric field effect transistors (FeFETs): advancements, challenges and exciting prospects for next generation non-volatile memory (NVM) applications
Data intensive applications such as AI (Artificial Intelligence) and IoT (Internet of Things)
demand high performance and highly reliable non-volatile memories (NVM). FeFET offers …
demand high performance and highly reliable non-volatile memories (NVM). FeFET offers …
Ferroelectric Content-Addressable Memory Cells with IGZO Channel: Impact of Retention Degradation on the Multibit Operation
Indium gallium zinc oxide (IGZO)-based ferroelectric thin-film transistors (FeTFTs) are being
vigorously investigated for being deployed in computing-in-memory (CIM) applications …
vigorously investigated for being deployed in computing-in-memory (CIM) applications …
Ferroelectricity of hafnium oxide-based materials: Current status and future prospects from physical mechanisms to device applications
W Yang, C Yu, H Li, M Fan, X Song, H Ma… - Journal of …, 2023 - iopscience.iop.org
The finding of the robust ferroelectricity in HfO 2-based thin films is fantastic from the view
point of both the fundamentals and the applications. In this review article, the current …
point of both the fundamentals and the applications. In this review article, the current …
Wake up and retention in zinc magnesium oxide ferroelectric films
Zn 0.64 Mg 0.36 O (ZMO) is a newly discovered ferroelectric oxide with the wurtzite structure.
Epitaxial Zn 0.64 Mg 0.36 O films from 0.036 to 0.5 μm in thickness are grown on Pt/sapphire …
Epitaxial Zn 0.64 Mg 0.36 O films from 0.036 to 0.5 μm in thickness are grown on Pt/sapphire …
Hf0.5Zr0.5O2-Based Germanium Ferroelectric p-FETs for Nonvolatile Memory Applications
C Zacharaki, S Chaitoglou, N Siannas… - ACS Applied …, 2022 - ACS Publications
Ferroelectric field-effect transistors (FeFETs) with a TiN/Hf0. 5Zr0. 5O2 (HZO) gate stack on a
germanium p-type channel are fabricated as low-voltage nonvolatile memory (NVM) …
germanium p-type channel are fabricated as low-voltage nonvolatile memory (NVM) …
On the feasibility of 1t ferroelectric FET memory array
To fully exploit the ferroelectric field effect transistor (FeFET) as compact embedded
nonvolatile memory for various computing and storage applications, it is desirable to use a …
nonvolatile memory for various computing and storage applications, it is desirable to use a …
Oxygen Scavenging in HfZrOx‐Based n/p‐FeFETs for Switching Voltage Scaling and Endurance/Retention Improvement
The authors demonstrate improved switching voltage, retention, and endurance properties
in HfZrOx (HZO)‐based n/p‐ferroelectric field‐effect transistors (FeFETs) via oxygen …
in HfZrOx (HZO)‐based n/p‐ferroelectric field‐effect transistors (FeFETs) via oxygen …