Optoelectronic CMOS transistors: performance advantages for sub-7nm ULSI, RF ASIC, memories, and power MOSFETs
JN Pan - MRS Advances, 2019 - cambridge.org
Substantial increase of output current, and Ion/Ioff ratio for sub-7nm low power CMOS
transistors, can be accomplished using a novel optoelectronic technology, which is 100 …
transistors, can be accomplished using a novel optoelectronic technology, which is 100 …
ESD-capability Impacts of the RESURF NBL Length in High-voltage nLDMOSs
XC Mai, SL Chen, JY Lai, ZW Liu… - 2023 9th International …, 2023 - ieeexplore.ieee.org
In this paper, the Silvaco T-CAD software is used to simulate a high voltage n-LDMOS
(lateral double-diffused metal oxide field-effect transistor) for a 0.18 μm BCD process. The …
(lateral double-diffused metal oxide field-effect transistor) for a 0.18 μm BCD process. The …