Analytical equivalent circuit extraction procedure for broadband scalable modeling of three-port center-tapped symmetric on-chip inductors

V Issakov, S Kehl-Waas, S Breun - IEEE Transactions on …, 2019 - ieeexplore.ieee.org
This paper presents a new, almost fully analytical methodology for component value
extraction of a double-π equivalent circuit model for three-port on-chip inductors from a …

[HTML][HTML] Верификация модели интегральной катушки индуктивности для СВЧ LC-фильтров в Si-и SiGe-системах на кристалле

ВВ Ерохин - Вестник СибГУТИ, 2022 - cyberleninka.ru
В работе описывается модель проводника, которая может быть использована для
построения катушек индуктивности различных конфигураций топологий в любых Si и …

[HTML][HTML] Broadband Lumped-Element Parameter Extraction Method of Two-Port 3D MEMS In-Chip Solenoid Inductors Based on a Physics-Based Equivalent Circuit …

J Sun, H Li, S Wu, T Xu, H Li, H Wu, S Xia - Micromachines, 2020 - mdpi.com
Integrated 2D spiral inductors possess low inductance per unit area, which limits their
application range. However, the state of investigation into the lumped-element parameter …

Accurate modeling of three-port center-tapped octagonal inductors for SPDT switch design in 0.13-μm BiCMOS

T Chen, J He, P Chen, X Chen, H Wang… - 2016 IEEE …, 2016 - ieeexplore.ieee.org
An accurate modeling of three-port center-tapped inductors is proposed in this paper, which
is specially designed to achieve high performance with the symmetrically octagonal twin …

[HTML][HTML] Modeling 3-Port Center-Tapped Spiral Inductors for K-Band VCO

X Chen, Q Su, T Chen, L Cai, J Luo, H Wang… - …, 2017 - microwavejournal.com
Three-port center-tapped spiral inductors are designed to achieve high performance with
symmetrically octagonal twin shapes for a K-Band voltage-controlled oscillator (VCO) in 0.13 …