Carrier removal rates in 4H–SiC power diodes–A predictive analytical model
An analytical model for predicting the proton and neutron radiation-induced carrier removal
in silicon carbide (4H–SiC) diodes, is developed. It is primarily aimed towards a fast …
in silicon carbide (4H–SiC) diodes, is developed. It is primarily aimed towards a fast …
Electrical deterioration of 4H-SiC MOS capacitors due to bulk and interface traps induced by proton irradiation
YX Lin, DS Chao, JH Liang, JY Jiang… - Microelectronics …, 2023 - Elsevier
In this study, the displacement damage dose (DDD) effects of proton irradiation on bulk
crystal and interfacial properties of 4H-SiC MOS capacitors (MOSCs) were investigated. The …
crystal and interfacial properties of 4H-SiC MOS capacitors (MOSCs) were investigated. The …
Mechanism of electrical performance degradation of 4H-SiC junction barrier Schottky diodes induced by neutron irradiation
H Li, J Wang, B Song, H Li, L Geng, B Duan… - Nuclear Instruments and …, 2024 - Elsevier
Abstract 4H-SiC junction barrier Schottky diodes (JBS) were irradiated by reactor neutrons.
The degradation in the electrical performance of JBS is characterized by IV and CV …
The degradation in the electrical performance of JBS is characterized by IV and CV …
Influence of 700 keV O3+ ion implantation on current transport properties of Cr/p-GaN SBD's
S Kumar, RH Shankaregowda… - Radiation Effects and …, 2024 - Taylor & Francis
In the present study we show a detailed investigation into the influence of 700 keV O3+ ion
implantation in Cr/p-GaN SBDs on electrical characteristics/current transport properties. Also …
implantation in Cr/p-GaN SBDs on electrical characteristics/current transport properties. Also …
SiC 功率器件辐照效应研究进展
刘超铭， 王雅宁， 魏轶聃， 王天琦， 齐春华， 张延清… - 电子与封装, 2022 - ep.org.cn
SiC 功率器件是许多航天器用电子设备的重要组成部分, 是保障深空探测任务顺利进行的前提和
基础. 在梳理SiC 功率器件发展概况的同时, 针对不同SiC 功率器件(SiC SBD, SiC JBS, SiC …
基础. 在梳理SiC 功率器件发展概况的同时, 针对不同SiC 功率器件(SiC SBD, SiC JBS, SiC …
Research on the optimal width and optimal life value of IGBT unilateral local lifetime control
L Ma, J Xi, G Qu, S Chang, J Zhang - IEICE Electronics Express, 2024 - jstage.jst.go.jp
In order to explore the improvement of IGBT devices with high performance and low loss by
unilateral local lifetime control, this paper uses Sentaurus TCAD simulation to compare the …
unilateral local lifetime control, this paper uses Sentaurus TCAD simulation to compare the …
Stability, electronic and defect levels induced by substitution of Al and P pair in 4H–SiC
Impurities play a major role in identifying the most enhanced defect-levels induced in 4H–
SiC. Among the important n-and p-type dopants in SiC are the P and Al, respectively. The P …
SiC. Among the important n-and p-type dopants in SiC are the P and Al, respectively. The P …
Induced defect levels of P and Al vacancy-complexes in 4H-SiC: A hybrid functional study
The electronic behaviour of high-dose phosphorus implanted in 4 H-SiC is mainly desirable
to obtained lower sheet resistance of 4 H-SiC. Al doping on the other hand acts as an …
to obtained lower sheet resistance of 4 H-SiC. Al doping on the other hand acts as an …
Electrically active induced energy levels and metastability of B and N vacancy-complexes in 4H–SiC
Electrically active induced energy levels in semiconductor devices could be beneficial to the
discovery of an enhanced p or n-type semiconductor. Nitrogen (N) implanted into 4H–SiC is …
discovery of an enhanced p or n-type semiconductor. Nitrogen (N) implanted into 4H–SiC is …
[HTML][HTML] Medium Energy Carbon and Nitrogen Ion Beam Induced Modifications in Charge Transport, Structural and Optical Properties of Ni/Pd/n-GaN Schottky Barrier …
The irradiation effects of carbon and nitrogen medium energy ions (MEI) on charge
transport, structural and optical properties of Ni/Pd/n-GaN Schottky barrier diodes are …
transport, structural and optical properties of Ni/Pd/n-GaN Schottky barrier diodes are …