Parallel connection of silicon carbide MOSFETs—Challenges, mechanism, and solutions
Power semiconductor devices are often connected in parallel to increase the current rating
of the power conversion systems. However, due to mismatched circuit parameters or …
of the power conversion systems. However, due to mismatched circuit parameters or …
Comprehensive analysis of paralleled sic mosfets current imbalance under asynchronous gate signals
Parallel-connected power device is an extensively applied solution in the industry to
increase the current rating of the converter system. However, due to the undesired printed …
increase the current rating of the converter system. However, due to the undesired printed …
Digital close-loop active gate driver for static and dynamic current sharing of paralleled SiC MOSFETs
Silicon carbide (SiC) power devices have been extensively for high-power-density
application scenarios. To increase the current rating, SiC devices are usually connected in …
application scenarios. To increase the current rating, SiC devices are usually connected in …
Optimization of Turn-on Loss Reduction and Analytical Model of SiSiC Hybrid Switch
M Bai, H Wang, Z Dong, Q Guo… - 2023 IEEE 2nd …, 2023 - ieeexplore.ieee.org
A silicon/silicon carbide (Si/SiC) hybrid switch (HyS), comprised of a high-current Si
insulated gate bipolar transistor and a low-current SiC metal oxide semiconductor field effect …
insulated gate bipolar transistor and a low-current SiC metal oxide semiconductor field effect …