1.37 kV/12 A NiO/β-Ga2O3 Heterojunction Diode With Nanosecond Reverse Recovery and Rugged Surge-Current Capability
Ga 2 O 3 power diodes with high voltage/current ratings, superior dynamic performance,
robust reliability, and potentially easy-to-implement are a vital milestone on the Ga 2 O 3 …
robust reliability, and potentially easy-to-implement are a vital milestone on the Ga 2 O 3 …
Demonstration of avalanche and surge current robustness in GaN junction barrier Schottky diode with 600-V/10-A switching capability
In this letter, we achieved significantly enhanced avalanche ruggedness and surge current
capability in GaN junction barrier Schottky (JBS) diode for highly reliable power operation …
capability in GaN junction barrier Schottky (JBS) diode for highly reliable power operation …
Investigation of 1200 V SiC MOSFETs' surge reliability
In this work, the surge reliability of 1200 V SiC metal-oxide-semiconductor field-effect
transistors (MOSFETs) from various manufactures has been investigated in the reverse …
transistors (MOSFETs) from various manufactures has been investigated in the reverse …
Robust Thermal Transport across the Surface-Active Bonding SiC-on-SiC
G Ma, X Xiao, B Meng, Y Ma, X Xing… - … Applied Materials & …, 2024 - ACS Publications
Surface-active bonding (SAB) is a promising technique for semiconductors directly bonding.
However, the interlayer of the bonding interface and the reduced layer thickness may affect …
However, the interlayer of the bonding interface and the reduced layer thickness may affect …
The Surge Current Failure and Thermal Analysis of 4H-SiC Schottky Barrier Diode
B Zhang, Y Zhong, P Cui, Y Cui, M Xu… - … on Electron Devices, 2024 - ieeexplore.ieee.org
The surge current capability is one of the key parameters for the application of silicon
carbide (SiC) Schottky barrier diode (SBD) in power converters. In this study, the surge …
carbide (SiC) Schottky barrier diode (SBD) in power converters. In this study, the surge …
Contribution to Silicon-Carbide-MESFET ESD robustness analysis
T Phulpin, K Isoird, D Trémouilles… - … on Device and …, 2018 - ieeexplore.ieee.org
In this paper, electrostatic discharge (ESD) tests are performed on silicon carbide (SiC)
MESFETs in order to understand their physical behavior and failure mechanisms during …
MESFETs in order to understand their physical behavior and failure mechanisms during …
New Insights using Avalanche Mode for On-wafer Evaluation of SiC Diodes Technology and Design Ruggedness
A Abbas, C Le Royer, R Lavieville… - … Devices and ICs …, 2024 - ieeexplore.ieee.org
On-wafer measurements of 1200V rated 4H-SiC power diodes have been performed in near
avalanche mode to investigate the stability and robustness of the devices. The method …
avalanche mode to investigate the stability and robustness of the devices. The method …
Novel layout design of 4H-SiC merged PiN Schottky diodes leading to improved surge robustness
JH Chen, Y Wang, XX Fei, MT Bao, F Cao - Chinese Physics B, 2023 - iopscience.iop.org
A method to improve the surge current capability of silicon carbide (SiC) merged PiN
Schottky (MPS) diodes is presented and investigated via three-dimensional electro-thermal …
Schottky (MPS) diodes is presented and investigated via three-dimensional electro-thermal …
[图书][B] Advanced analysis of microelectronic devices and systems by lock-in IR thermography
J León Cerro - 2016 - ddd.uab.cat
Desde los inicios de la revolución microelectrónica, su evolución tecnológica siempre se ha
visto marcada por la búsqueda constante de dispositivos y sistemas electrónicos …
visto marcada por la búsqueda constante de dispositivos y sistemas electrónicos …
Ruggedness of 1200V SiC Schottky and MPS diodes
S Fichtner - 2018 - monarch.qucosa.de
Abstract (DE) Eine wichtige Eigenschaft von Leistungsdioden ist ihre Stoßstromrobustheit,
also die Fähigkeit, einem kurzeitigen hohen Strom standzuhalten. Bei Dioden aus SiC wird …
also die Fähigkeit, einem kurzeitigen hohen Strom standzuhalten. Bei Dioden aus SiC wird …