RF signal routers are become prominent in the modern wireless communication
transceivers. SPMT RF MEMS switches predominantly plays significant role in RF signal …

Abstract Tunnel Field Effect Transistor (TFET) has become one of the promising devices to
be part of Integrated circuits as the technology advances to the nanoscale. A TFET has many …

Optimization of the RF MEMS switch is essential to enhance its performance characteristics
at high frequency Millimeterwave applications. Many optimization techniques have been …

Now a days, filters became essential component in many of the RF, satellites and wireless
communication networks and system. The size and complexity of the system increases while …

Global existence and uniqueness conditions for a dimensionless fourth-order integro-
differential model for an electrostatic-elastic MEMS device with parallel plates and fringing …

In this paper, we have designed and simulations of RF MEMS shunt switch. The electro-
mechanical and electromagnetic analysis of the switch have been done using COMSOL …

In this paper we proposed a new structure of GaAsP/6H-SiC/GaN Power semiconductor field
effect transistor with undoped region under gate. The device is made of semiconductor …

This paper presents the capacitance modelling of RF MEMS shunt switch by using the
parallel plate, fringing field, and parasitic capacitance. The model carried out fringing …

A unique structure of GaAs/6H-SiC/InGaN metal–semiconductor field-effect transistor has
been proposed and demonstrated in this work. The proposed GaAs/6H-SiC/InGaNMetal …

In this paper, starting from a well-known nonlinear hyperbolic integro-differential model of
the fourth order describing the dynamic behavior of an electrostatic MEMS with a parallel …