In this paper, the impact of scaling on the gate all around the nanosheet field effect transistor
(GAA NSFET) is assessed in detail at sub-5-nm nodes for digital and analog/RF …

In this paper, DC and analog/RF figures of merit (FOMs) for different geometrical variations
of the Gate all around (GAA) Nanosheet FET (NSFET) are computationally examined. For …

The performance of comb-like channel field effect transistor (CombFET) and nanosheet FET
(NSFET) is addressed at both device and circuit levels at the 3-nm node. The CombFET is …

Moore's law states that the technical innovations are being absorbed already. The device's
controllability has dramatically improved since moving from a straightforward MOSFET …

In this paper, a multi-gate junctionless field-effect transistor with a quad gate and multiple
channels has been proposed and thoroughly simulated. The proposed device offers a lower …

Abstract The Nanosheet FET (NS FET) has proven to be a potential candidate for sub-5-nm
nodes. For the first time, in this manuscript, the NS FET performance is demonstrated by …

Improvements in the VLSI industry have always been striving to justify the Moore's law by
implanting, twice count transistors from the existing one. This law has made a significant …

The impression of gate dielectric and spacer dielectric on the performance of rectangular
core shell double gate junctionless transistor (RCS-DGJLT) using extensive simulations is …

For the sake of promoting core–shell channel (CSC) junctionless (JL) MOSFET, this paper
models opposite doping core–shell channel (ODCSC) surrounding-gate (SG) JL MOSFET …

The detailed performance analysis of core–shell Gate All Around junctionless field effect
transistor along with CMOS inverter as an application with quantum models is presented in …