Creation of paired electron states in the gap of semiconducting carbon nanotubes by correlated hydrogen adsorption

G Buchs, AV Krasheninnikov, P Ruffieux… - New Journal of …, 2007 - iopscience.iop.org
The specific, local modification of the electronic structure of carbon nanomaterials is as
important for novel electronic device fabrication as the doping in the case of silicon-based …

Carrier lifetimes and recombination–generation mechanisms in semiconductor device physics

VK Khanna - European journal of physics, 2004 - iopscience.iop.org
The existence of a multiplicity of carrier lifetimes and their inextricable linkage to the
measurement technique, injection level and position of the recombination centre in the …

Lifetime control in silicon power PiN diode by ion irradiation: Suppression of undesired leakage

P Hazdra, V Komarnitskyy - Microelectronics journal, 2006 - Elsevier
The irradiation with high-energy (7.35 MeV) protons through a set of energy degraders was
used to suppress leakage of the silicon power diodes subjected to local lifetime control. The …

Experimental study on power consumption in lifetime engineered power diodes

S Daliento, L Mele, P Spirito, R Carta… - IEEE transactions on …, 2009 - ieeexplore.ieee.org
In this paper, we present a quantitative study of the effects of lifetime engineering treatments
on the switching operation of power diodes, with special regards to the whole energy …

Radiation-enhanced diffusion of palladium for a local lifetime control in power devices

J Vobecky, P Hazdra - IEEE Transactions on Electron Devices, 2007 - ieeexplore.ieee.org
Palladium (Pd) diffusion from a surface layer enhanced by defects from a helium (He)
irradiation is shown to provide a local lifetime control in a power pin diode annealed …

High-power PiN diode with local lifetime control using palladium diffusion controlled by radiation defects

J Vobecky, P Hazdra - IEEE electron device letters, 2005 - ieeexplore.ieee.org
We demonstrate for the first time a high-power PiN diode with local lifetime control using
palladium (Pd) diffusion. Low-temperature (600/spl deg/C-700/spl deg/C) diffusion of Pd is …

Leakage current in fast recovery diode suppressed by low temperature supercritical fluid treatment process

WC Hung, FY Jin, TC Chang, FM Ciou… - IEEE Electron …, 2020 - ieeexplore.ieee.org
Fast recovery diodes (FRD) are widely used in transformer circuits for fast switching.
Generally, in order to reduce forward voltage to achieve fast switching, the doping …

On Modern IGBT Modules: Characterization, Reliability and Failure Mechanisms

D Xiao - 2010 - ntnuopen.ntnu.no
The increased demand of offshore power conversion systems is driven by newly initiated
offshore projects for wind farms and oil production. Because of long distances to shore and …

Helium irradiated high-power P–i–N diode with low ON-state voltage drop

J Vobecký, P Hazdra, V Záhlava - Solid-State Electronics, 2003 - Elsevier
The application of a 300 nm thick platinum silicide (PtSi) layer at the place of the anode
contact layer of a soft recovery 2.5 kV/100 A high-power P–i–N diode brought a reduction of …

High-power silicon pin diode with the radiation enhanced diffusion of gold

J Vobecký, V Záhlava, P Hazdra - IEEE Electron Device Letters, 2014 - ieeexplore.ieee.org
Fast recovery pin diode with anode pn junction modified by the radiation-enhanced diffusion
(RED) of gold is presented. The RED of gold is shown to provide the local lifetime control of …