Enormous electroresistance and field effect studies on LaMnO3–δ/La0. 7Ca0. 3MnO3/LaAlO3 manganite–manganite composite structure
Field effect configuration (FEC) coupled field effect studies (FES) is one of the prime
requisites for the development of spintronic based logic and memory devices having better …
requisites for the development of spintronic based logic and memory devices having better …
Current–voltage characteristics of Au/ZnO/n-Si device in a wide range temperature
Abstract Au/ZnO/n-Si device was obtained by using atomic layer deposition (ALD)
technique, and it was characterized by I–V measurement in a wide temperature from 100 to …
technique, and it was characterized by I–V measurement in a wide temperature from 100 to …
Low field magnetoelectric and magnetotransport properties of sol–gel grown nanostructured LaMnO3 manganites
In this communication, we report the results of the studies on dielectric, electroresistance
(ER), magnetoresistance (MR) and electric pulse induced resistance (EPIR) change …
(ER), magnetoresistance (MR) and electric pulse induced resistance (EPIR) change …
The comparison of Co/hematoxylin/n-Si and Co/hematoxylin/p-Si devices as rectifier for a wide range temperature
We employed hematoxylin as interfacial layer between the n-and p-type silicon substrate
and cobalt (Co) metallic contact to obtain and compare Co/hematoxylin/n-Si and …
and cobalt (Co) metallic contact to obtain and compare Co/hematoxylin/n-Si and …
Defects induced resistive switching behavior in Ca doped YMnO3–based non–volatile memory devices through electronic excitations
Defect induced structural, microstructural, resistive switching (RS) characteristics and related
responsible charge conduction mechanisms of Y 0· 95 Ca 0· 05 MnO 3 (YCMO) manganite …
responsible charge conduction mechanisms of Y 0· 95 Ca 0· 05 MnO 3 (YCMO) manganite …
Defect dynamics in the resistive switching characteristics of Y0. 95Sr0. 05MnO3 films induced by electronic excitations
We understand the role of defect dynamics on the resistive switching (RS) characteristics of
pulsed laser deposition (PLD) grown Y 0.95 Sr 0.05 MnO 3 (YSMO) manganite films on the …
pulsed laser deposition (PLD) grown Y 0.95 Sr 0.05 MnO 3 (YSMO) manganite films on the …
Tunable resistive nature of LaMnO3/Nd0. 7Sr0. 3MnO3 interfaces: role of swift heavy ion irradiation
In the present communication, high crystalline quality LaMnO 3/Nd 0.7 Sr 0.3 MnO 3/SrTiO 3
(LMO/NSMO/STO) structures were fabricated using low cost chemical solution deposition …
(LMO/NSMO/STO) structures were fabricated using low cost chemical solution deposition …
Resistive switching behaviour of novel GdMnO3-based heterostructures
Synthesis and electrical transport properties of GdMnO 3/Al-doped ZnO (AZO) and GdMnO
3/ZnO (ZO) heterostructures grown by vacuum deposition are described. Pulsed laser …
3/ZnO (ZO) heterostructures grown by vacuum deposition are described. Pulsed laser …
Temperature dependent current-voltage characteristics of Al/TiO2/n-Si and Al/Cu: TiO2/n-Si devices
We fabricated undoped and Cu doped TiO 2 thin films by spin coating technique and
employed the films as interfacial oxide layer between the Al and n-type Si to investigate the …
employed the films as interfacial oxide layer between the Al and n-type Si to investigate the …
Interface based field effect configuration and charge conduction mechanisms for manganite thin film heterostructures
Control over the movements of free charge carriers across any manganite based interface
can functionalize the device for spintronic applications. This can be achieved through …
can functionalize the device for spintronic applications. This can be achieved through …