A focused pulsed X-ray beam is used to determine how the redistribution of the electric field by the gate-connected field plate affects single-event transient (SET) susceptibility of an …
The advantages and the tradeoffs associated with the use of inverse-mode (IM) silicon– germanium (SiGe) heterojunction bipolar transistors (HBTs) biasing circuitry in radio …
In this article, we propose a scalable approach for a W-band 2-D beam steering transmitter based on CMOS active frequency multiplier chips. Stacking of PCBs containing …
The single-event transient (SET) response of two different silicon-germanium (SiGe) X-band (8-12 GHz) low noise amplifier (LNA) topologies is fully investigated in this paper. The two …
The propagation of single-event transient (SET) signals in a silicon-germanium direct- conversion receiver carrying modulated data is explored. A theoretical analysis of transient …
This article presents novel radiation hardening design techniques to substantially reduce the single-event effects (SEEs) on high-frequency receivers subject to various radiations when …
A fully integrated W-band silicon-germanium (SiGe) transceiver is presented which provides a loop-back built-in self-test (BIST) functionality that allows continuous monitoring of the …
The single-event transient (SET) response of a W-band (75-110 GHz) radar receiver front- end is investigated in this paper. A new technique to facilitate the SET testing of the high …
S Mateos-Angulo… - Semiconductor …, 2018 - iopscience.iop.org
This paper analyses the effects of single-event transients (SETs) on CMOS low noise amplifiers (LNA) designed for a 0.18$\mu {\rm {m}} $ technology. Two well-known …