This work presents a novel terahertz sideband separating receiver (SSR) implemented in
silicon germanium 0.13 μm BiCMOS technology that covers a broad frequency range of 220 …

A focused pulsed X-ray beam is used to determine how the redistribution of the electric field
by the gate-connected field plate affects single-event transient (SET) susceptibility of an …

The advantages and the tradeoffs associated with the use of inverse-mode (IM) silicon–
germanium (SiGe) heterojunction bipolar transistors (HBTs) biasing circuitry in radio …

In this article, we propose a scalable approach for a W-band 2-D beam steering transmitter
based on CMOS active frequency multiplier chips. Stacking of PCBs containing …

The single-event transient (SET) response of two different silicon-germanium (SiGe) X-band
(8-12 GHz) low noise amplifier (LNA) topologies is fully investigated in this paper. The two …

The propagation of single-event transient (SET) signals in a silicon-germanium direct-
conversion receiver carrying modulated data is explored. A theoretical analysis of transient …

This article presents novel radiation hardening design techniques to substantially reduce the
single-event effects (SEEs) on high-frequency receivers subject to various radiations when …

A fully integrated W-band silicon-germanium (SiGe) transceiver is presented which provides
a loop-back built-in self-test (BIST) functionality that allows continuous monitoring of the …

The single-event transient (SET) response of a W-band (75-110 GHz) radar receiver front-
end is investigated in this paper. A new technique to facilitate the SET testing of the high …

This paper analyses the effects of single-event transients (SETs) on CMOS low noise
amplifiers (LNA) designed for a 0.18$\mu {\rm {m}} $ technology. Two well-known …