A review of WBG and Si devices hybrid applications

L Zhang, Z Zheng, X Lou - Chinese Journal of Electrical …, 2021 - ieeexplore.ieee.org
In recent years, next-generation power semiconductor devices, represented by silicon
carbide (SiC) and gallium nitride (GaN), have gradually emerged. Because wide-bandgap …

Imbalance current analysis and its suppression methodology for parallel SiC MOSFETs with aid of a differential mode choke

Z Zeng, X Zhang, Z Zhang - IEEE Transactions on Industrial …, 2019 - ieeexplore.ieee.org
Parallel connection of silicon carbide (SiC) MOSFETs is a cost-effective solution for high-
capacity power converters. However, transient imbalance current, during turn-on and-off …

A Critical review on reliability and short circuit robustness of silicon carbide power MOSFETs

S Sreejith, J Ajayan, SB Devasenapati, B Sivasankari… - Silicon, 2023 - Springer
Superior electrical and physical properties of SiC (Silicon Carbide) make them ideal for
various high voltage, high frequency and high power electronic applications. When …

Power loss model and efficiency analysis of three-phase inverter based on SiC MOSFETs for PV applications

MH Ahmed, M Wang, MAS Hassan, I Ullah - IEEE Access, 2019 - ieeexplore.ieee.org
This paper presents the power loss model analysis and efficiency of three-level neutral-point-
clamped (3L-NPC) inverter that is widely employed in solar photovoltaic energy conversion …

Stepwise design methodology and heterogeneous integration routine of air-cooled SiC inverter for electric vehicle

Z Zeng, X Zhang, F Blaabjerg… - IEEE transactions on …, 2019 - ieeexplore.ieee.org
Carrying on SiC devices, the air-cooled inverter of the electric vehicle (EV) can eliminate the
traditional complicated liquid-cooling system in order to obtain a light and compact …

A Dynamic Current Balancing Method for Paralleled SiC MOSFETs Using Monolithic Si-RC Snubber Based on a Dynamic Current Sharing Model

J Lv, C Chen, B Liu, Y Yan… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
The dynamic current imbalance between paralleled SiC mosfet s will cause unbalanced
losses and reduce current capacity. The existing current balancing methods will make the …

Layout-dominated dynamic current imbalance in multichip power module: Mechanism modeling and comparative evaluation

Z Zeng, X Zhang, X Li - IEEE Transactions on Power …, 2019 - ieeexplore.ieee.org
The multichip power module is an irreplaceable component for high-capacity industrial
converters. Dynamic current imbalance among parallel chips challenges the electrothermal …

Dynamic current sharing mechanism analysis of paralleled SiC MOSFETs considering parasitic mutual inductances based on an improved model

J Lv, C Chen, B Liu, Y Yan, Z Zheng… - IEEE Transactions on …, 2024 - ieeexplore.ieee.org
The dynamic current imbalance between paralleled SiC mosfet s can cause unbalanced
switching losses and limit the current capacity. It is essential to investigate the influences of …

Study of effects of corrosion temperature on corrosion resistance of Cu-C alloys to liquid Ga

D He, G Liu, J Liu, H Xie, D Yue, Z Chen, C Wei, X Xu… - Corrosion …, 2023 - Elsevier
The corrosion interface characteristics and corrosion behavior of Cu-C alloys in liquid Ga at
100–180℃ were studied in this paper. The corrosion mechanism of Cu-C alloys was …

Digital active gate driving system for paralleled SiC MOSFETs with closed-loop current balancing control

L Du, Y Wei, X Du, A Stratta… - 2022 IEEE Energy …, 2022 - ieeexplore.ieee.org
Parallel connection of multiple SiC MOSFETs is often adopted to increase converter power
rating. However, due to mismatches in the circuit layout parasitic or differences in the …