4,719,594 4,769,339 4,876,220 4.959, 812 5,106,775 5,166,096 5,166,758 5,177.567
5,332,923 5,391,901 5,515.488 5,534,712 5,550,396 5,687,112 5,688,713 5,716,883 …

A phase change memory device comprises a photolithographically formed phase change
memory cell having first and second electrodes and a phase change element positioned …

US7608848B2 - Bridge resistance random access memory device with a singular contact
structure - Google Patents US7608848B2 - Bridge resistance random access memory device …

5,789,758 5,814,527 5,831.276 5,837,564 5,869,843 5,879,955 5,920,788 5,952,671
5,970,336 5,985,698 5.998, 244 6,011,725 6,025,220 6,031,287 6,034,882 6,077,729 …

(57) ABSTRACT A method is described for operating a bistable resistance random access
memory having two memory layer stacks that are aligned in series is disclosed. The bistable …

(57) ABSTRACT A memory device includes a driver comprising a pn-junction in the form of a
multilayer stack including a first doped semiconductor region having a first conductivity type …

A method of forming a memory cell comprises forming a stack comprising a first electrode,
an insulating layer over the first electrode, and a second electrode over the insulating layer …

A method for manufacturing a memory device comprises forming an electrode layer on a
substrate which comprises circuitry made using front-end-of-line procedures. The electrode …

US7560337B2 - Programmable resistive RAM and manufacturing method - Google Patents
US7560337B2 - Programmable resistive RAM and manufacturing method - Google Patents …

US PATENT DOCUMENTS 3,271,591 A 9/1966 Ovshinsky 3,530,441 A 9/1970 Ovshinsky
4,452,592 A 6, 1984 Tsai 4,599,705 A 7/1986 Holmberg et al. 4,719,594 A 1/1988 Young et …