Stochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities
T Grasser - Microelectronics Reliability, 2012 - Elsevier
Charge trapping at oxide defects fundamentally affects the reliability of MOS transistors. In
particular, charge trapping has long been made responsible for random telegraph and 1/f …
particular, charge trapping has long been made responsible for random telegraph and 1/f …
Total ionizing dose effects in MOS oxides and devices
TR Oldham, FB McLean - IEEE transactions on nuclear science, 2003 - ieeexplore.ieee.org
Total ionizing dose effects in MOS oxides and devices Page 1 IEEE TRANSACTIONS ON
NUCLEAR SCIENCE, VOL. 50, NO. 3, JUNE 2003 483 Total Ionizing Dose Effects in MOS …
NUCLEAR SCIENCE, VOL. 50, NO. 3, JUNE 2003 483 Total Ionizing Dose Effects in MOS …
Total-ionizing-dose effects in modern CMOS technologies
HJ Barnaby - IEEE transactions on nuclear science, 2006 - ieeexplore.ieee.org
This review paper discusses several key issues associated with deep submicron CMOS
devices as well as advanced semiconductor materials in ionizing radiation environments …
devices as well as advanced semiconductor materials in ionizing radiation environments …
Total-Ionizing-Dose Effects, Border Traps, and 1/f Noise in Emerging MOS Technologies
DM Fleetwood - IEEE Transactions on Nuclear Science, 2020 - ieeexplore.ieee.org
Subthreshold leakage currents and threshold-voltage shifts due to total-ionizing-dose (TID)
irradiation are reviewed briefly for highly scaled devices in emerging MOS technologies …
irradiation are reviewed briefly for highly scaled devices in emerging MOS technologies …
Noise and Defects in Microelectronic Materials and Devices
DM Fleetwood - IEEE Transactions on Nuclear Science, 2015 - ieeexplore.ieee.org
This paper reviews and compares predictions of the Dutta-Horn model of low-frequency
excess (1/f) noise with experimental results for thin metal films, MOS transistors, and …
excess (1/f) noise with experimental results for thin metal films, MOS transistors, and …
Identification of oxide defects in semiconductor devices: A systematic approach linking DFT to rate equations and experimental evidence
W Goes, Y Wimmer, AM El-Sayed, G Rzepa… - Microelectronics …, 2018 - Elsevier
It is well-established that oxide defects adversely affect functionality and reliability of a wide
range of microelectronic devices. In semiconductor-insulator systems, insulator defects can …
range of microelectronic devices. In semiconductor-insulator systems, insulator defects can …
A two-stage model for negative bias temperature instability
Based on the established properties of the most commonly observed defect in amorphous
oxides, the E'center, we suggest a coupled two-stage model to explain the negative bias …
oxides, the E'center, we suggest a coupled two-stage model to explain the negative bias …
Dual-Level Enhanced Nonradiative Carrier Recombination in Wide-Gap Semiconductors: The Case of Oxygen Vacancy in SiO2
The conventional single-defect-mediated Shockley–Read–Hall model suggests that the
nonradiative carrier recombination rate in wide-band gap (WBG) semiconductors would be …
nonradiative carrier recombination rate in wide-band gap (WBG) semiconductors would be …
Unified model of hole trapping, 1/f noise, and thermally stimulated current in MOS devices
DM Fleetwood, HD Xiong, ZY Lu… - … on Nuclear Science, 2002 - ieeexplore.ieee.org
Capture cross-section data from the literature and recent density-functional theory (DFT)
calculations strongly suggest that the 1/f noise of MOS devices is caused by the thermally …
calculations strongly suggest that the 1/f noise of MOS devices is caused by the thermally …
Border traps and bias-temperature instabilities in MOS devices
DM Fleetwood - Microelectronics Reliability, 2018 - Elsevier
An overview of the effects of border traps on device performance and reliability is presented
for Si, Ge, SiGe, InGaAs, SiC, GaN, and carbon-based MOS devices that are subjected to …
for Si, Ge, SiGe, InGaAs, SiC, GaN, and carbon-based MOS devices that are subjected to …