The promising capability of Triple Material Surrounding Gate Junctionless Tunnel FET (TMSG–JL–TFET) based 6 T SRAM structure is demonstrated by employing Germanium …
The performance of TFET biosensors is considered to be remarkable as it is has shown strong immunity towards the non-ideal effects occurring in conventional CMOS-based …
This present article interprets the analytical models of central channel potential, the threshold voltage, and subthreshold current for Graded-Doped Junctionless-Gate-All …
The channel modulated junctionless gate all around (CM-JL-GAA) MOSFET improves the SCE's with high graded doping of the channel region. Temperature effects on electrostatic …
L Priya - Informacije MIDEM, 2018 - ojs.midem-drustvo.si
In this paper, a subthreshold analytical model for Triple Material Gate-All-Around (TMGAA) Junctionless Tunnel FET (JLTFET) with Germanium and High-K gate dielectric material is …
In this paper, 2-D analytical models of channel central potential, threshold voltage, subthreshold current and subthreshold swing for graded channel double gate (GC-DG) …
V Gupta, AK Pandey, A Gupta, Vedvrat… - International Journal of …, 2024 - Taylor & Francis
The short channel effects are improved in GC-JL-GAA MOSFETs by raising the channel's graded doping level. The noise and linearity of the device plays a crucial role in RFIC circuit …
This article presents the analytical modeling of the subthreshold drain current of junctionless channel-modulated double-material double-gate (JL-CM-DMDG) MOSFET. The first time …
N Bora, P Pegu, R Subadar - Journal of Advanced Physics, 2017 - ingentaconnect.com
In this paper, we had investigated the Quantum Mechanical Effects (QME) on the surface potential and threshold voltage of a Dual Material Double Gate Junctionless Field Effect …