Realizing efficient volume depletion in SOI junctionless FETs
In this paper, we provide a simple and effective solution to realize efficient volume depletion
and therefore, significantly reduce the OFF-state leakage current of a junctionless FET …
and therefore, significantly reduce the OFF-state leakage current of a junctionless FET …
Triple metal surrounding gate junctionless tunnel FET based 6T SRAM design for low leakage memory system
The promising capability of Triple Material Surrounding Gate Junctionless Tunnel FET
(TMSG–JL–TFET) based 6 T SRAM structure is demonstrated by employing Germanium …
(TMSG–JL–TFET) based 6 T SRAM structure is demonstrated by employing Germanium …
Modeling and performance analysis of Nanocavity Embedded Dopingless T-shaped Tunnel FET with high-K gate dielectric for biosensing applications
The performance of TFET biosensors is considered to be remarkable as it is has shown
strong immunity towards the non-ideal effects occurring in conventional CMOS-based …
strong immunity towards the non-ideal effects occurring in conventional CMOS-based …
A novel approach to model threshold voltage and subthreshold current of graded-doped junctionless-gate-all-around (GD-JL-GAA) MOSFETs
This present article interprets the analytical models of central channel potential, the
threshold voltage, and subthreshold current for Graded-Doped Junctionless-Gate-All …
threshold voltage, and subthreshold current for Graded-Doped Junctionless-Gate-All …
A novel technique to investigate the impact of temperature and process parameters on electrostatic and analog/RF performance of channel modulated junctionless …
The channel modulated junctionless gate all around (CM-JL-GAA) MOSFET improves the
SCE's with high graded doping of the channel region. Temperature effects on electrostatic …
SCE's with high graded doping of the channel region. Temperature effects on electrostatic …
Subthreshold modeling of triple material gate-all-around junctionless tunnel FET with germanium and high-K gate dielectric material
L Priya - Informacije MIDEM, 2018 - ojs.midem-drustvo.si
In this paper, a subthreshold analytical model for Triple Material Gate-All-Around (TMGAA)
Junctionless Tunnel FET (JLTFET) with Germanium and High-K gate dielectric material is …
Junctionless Tunnel FET (JLTFET) with Germanium and High-K gate dielectric material is …
Subthreshold modeling of graded channel double gate junctionless FETs
In this paper, 2-D analytical models of channel central potential, threshold voltage,
subthreshold current and subthreshold swing for graded channel double gate (GC-DG) …
subthreshold current and subthreshold swing for graded channel double gate (GC-DG) …
Impact of process parameters variation on noise and linearity performances of GC-JL-GAA MOSFET
The short channel effects are improved in GC-JL-GAA MOSFETs by raising the channel's
graded doping level. The noise and linearity of the device plays a crucial role in RFIC circuit …
graded doping level. The noise and linearity of the device plays a crucial role in RFIC circuit …
Modeling of threshold voltage and subthreshold current of junctionless channel-modulated dual-material double-gate (JL-CM-DMDG) MOSFETs
This article presents the analytical modeling of the subthreshold drain current of junctionless
channel-modulated double-material double-gate (JL-CM-DMDG) MOSFET. The first time …
channel-modulated double-material double-gate (JL-CM-DMDG) MOSFET. The first time …
A surface potential and threshold voltage model including quantum mechanical effects for a dual material double gate Junctionless field effect Transistor (DMDG …
In this paper, we had investigated the Quantum Mechanical Effects (QME) on the surface
potential and threshold voltage of a Dual Material Double Gate Junctionless Field Effect …
potential and threshold voltage of a Dual Material Double Gate Junctionless Field Effect …