In this work we investigate the characteristics and critical operating temperatures of on-
membrane embedded MOSFETs from an experimental and analytical point of view. This …

Design, Simulation and Comparative Analysis of Performance Parameters of a 4-bit CMOS
based Full Adder Circuit using Microwind a Page 1 IOSR Journal of VLSI and Signal …

In this paper, we explained how to develop a 4-bit comparator circuit at the Complementary
Metal Oxide Semiconductor (CMOS) technology nodes of 90 nm, 65 nm, and 45 nm, draw …

This research report provides an illustration of the CMOS-based SR flip-flop design and
simulation process using Cadence Virtuoso simulation tool. The current technological …

The dimensions of the various types of Metal Oxide Semiconductor Field Effect Transistor
(MOSFET) device structures are being shrunk continuously to accommodate more …

Design, Simulation, and Analysis of Different Operational Factors of a 4-bit Carry Look-Ahead
Adder Circuit in Microwind at Seve Page 1 IOSR Journal of VLSI and Signal Processing (IOSR-JVSP) …

Carrier scatterings in the inversion channel of MOSFET dominates the carrier mobility and
hence drain current. This paper presents an analytical model of the subthreshold drain …

This paper reports on the impact study with the variation of the gate insulation material and
thickness on different models of pocket implanted sub-100 nm n-MOS device. The gate …

This paper presents an analytical drain current flicker noise model for the asymmetric pocket
implanted nano scale n-MOSFET. The model is developed by assuming asymmetric linear …

This paper presents an analytical threshold voltage model of the pocket implanted nano
scale n-MOSFETs incorporating the drain and substrate bias effects using an asymmetric …