Low-dimensional semiconductor materials structures, where nanowires are needle-like one-
dimensional examples, have developed into one of the most intensely studied fields of …

In this review paper we will report the current state of research regarding the doping of III-
nitride materials and their alloys. GaN is a mature material with both n-type and p-type …

Homoepitaxial layers of AlN and heteroepitaxial layers of AlN on 4H-SiC substrates were
grown by metalorganic chemical vapor deposition at high temperatures up to 1400 C, and …

We present the electrical characterization of N-polar AlN layers grown by metal–organic
vapor phase epitaxy and the demonstration of N-polar AlN-channel metal–semiconductor …

Contrary to the arsenides where donors undergo stable DX transition, we find that Ge in
AlGaN does not suffer from the DX transition; instead, it undergoes a shallow donor (30 …

Quasi-vertical, high Al composition AlGaN Schottky diodes with breakdown voltages up to
500 V were grown on high quality AlN single crystal substrates. Diodes exhibited a~ 10 6 …

We report on the analysis of a combined mid-infrared spectroscopic ellipsometry and mid-
infrared optical Hall effect investigation of wurtzite structure c-plane oriented, crack-free …

High-Al-content AlxGa1− xN layers, x∼ 0.72, have been grown by metal organic chemical
vapour deposition (MOCVD) at a temperature ranging from 1000 to 1100° C, together with …

Point defects in semiconductors play a fundamental role for the material properties. Dopants
like impurities forming shallow donors and acceptors provide the means of controlling the …

III-Nitride materials have gathered enormous attention and undergone fast development,
due to superior properties such as wide band gap, high stability, high electron motilities …