Hot-carrier degradation in SiGe HBTs: A physical and versatile aging compact model
C Mukherjee, T Jacquet, GG Fischer… - … on Electron Devices, 2017 - ieeexplore.ieee.org
This paper presents a new physical compact model for interface state creation due to hot-
carrier degradation in advanced SiGe heterojunction bipolar transistors (HBTs). An …
carrier degradation in advanced SiGe heterojunction bipolar transistors (HBTs). An …
Reliability of SiGe, C HBTs operating at 500 GHz: characterization and modeling
T Jacquet - 2016 - theses.hal.science
The SiGe: C HBT reliability is an important issue in present and future practical applications.
To reduce the designtime and increase the robustness of circuit applications, a compact …
To reduce the designtime and increase the robustness of circuit applications, a compact …
[PDF][PDF] DOCTEUR DE
T JACQUET - theses.hal.science
Le sujet de cette thčse est l'analyse de la fiabilité des transistors bipolaires ā hétérojonction
SiGe: C et des circuits intégrés associés. Dans ce but, un modčle compact prenant en …
SiGe: C et des circuits intégrés associés. Dans ce but, un modčle compact prenant en …