Materials research plays a vital role in transforming breakthrough scientific ideas into next‐
generation technology. Similar to the way silicon revolutionized the microelectronics …

Recently, pulsed laser deposition (PLD) technology makes viable the epitaxial growth of
group III-nitrides on thermally active substrates at low temperature. The precursors …

Visible violet photoluminescence (PL) has been achieved at room temperature (RT) from
ZnO films grown on sapphire (001) substrate by pulsed laser deposition (PLD). Substrate …

ZnO thin film has been deposited on a sapphire (001) at a temperature of 400° C using a
pulsed laser deposition (PLD) with oxygen pressures of 50, 200, 300 and 500 mTorr. As the …

The pulsed laser deposition (PLD) technique has been applied for the epitaxial growth of
ZnO for more than two decades. The emergence of high-temperature stability of the excitonic …

A series of ZnO films with various thicknesses were prepared on (0001) sapphire substrate
by pulsed laser deposition (PLD). Scanning electron microscopy (SEM) and x-ray diffraction …

ZnO thin films are prepared on the glass, GaAs (100), Si (111), and Si (100) substrates at
different temperatures by the pulsed laser deposition (PLD) method. X-ray diffraction (XRD) …

We report on deposition of zinc oxide thin films on glass substrate at room temperature in
ambient oxygen pressure ranging from 10mTorr to 1Torr by pulsed laser deposition. As …

ZnO thin film has been deposited on a sapphire (001) at a temperature of 400° C using a
pulsed laser deposition with oxygen pressures of 1, 20, 50, 200, 300, and 500 mTorr. As the …

Abstract The Schottky contact of Pt/ZnO was formed by depositing ZnO films oriented along c-
axis by pulsed-laser deposition on Pt/Ti buffer layer supported by SiO 2/Si substrate. Effects …