In the advancement of the semiconductor device technology, ZnO could be a prospective
alternative than the other metal oxides for its versatility and huge applications in different …

Memristive devices are considered one of the most promising candidates to overcome
technological limitations for realizing next‐generation memories, logic applications, and …

Abstract One-dimensional (1D) zinc oxide (ZnO) nanostructures have been extensively and
intensively studied for several decades not only for their extraordinary chemical and physical …

Nonvolatile memory devices based on hybrid inorganic/organic nanocomposites have
emerged as excellent candidates for promising applications in next-generation electronic …

Organic-inorganic nanocomposite materials have attracted a great attention since they cover
a wide range of properties by combining the contrasting properties and/or creating novel …

In this paper, an overview of the influence of various modifications on ZnO-based RRAM has
been conducted. Firstly, the motivation for creating new memory technology is presented …

Resistive memory is one of the most promising candidates for next-generation nonvolatile
memory technology due to its variety of advantages, such as simple structure and low-power …

ZnO nanoparticles embedded polymethylmethacrylate (ZnO-PMMA) organic bistable
memory device was fabricated by sol-gel spin coating technique. ZnO-PMMA thin films were …

A route for the preparation of nanocomposite flexible devices featuring resistive hysteresis,
based on zinc oxide and UV curable polymers, was developed. A new phenomenon …

We reported on the influence of zinc oxide nanoparticles (ZnO NPs) on the electrical bistable
behavior of nonvolatile write-once-read-many-times (WORM) memory devices based on an …