A review of switching oscillations of wide bandgap semiconductor devices

J Chen, X Du, Q Luo, X Zhang, P Sun… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
Wide bandgap (WBG) devices offer the advantages of high frequency, high efficiency, and
high power density to power converters due to their excellent performance. However, their …

A survey on switching oscillations in power converters

T Liu, TTY Wong, ZJ Shen - … of Emerging and Selected Topics in …, 2019 - ieeexplore.ieee.org
High-frequency power converters enabled by wide bandgap (WBG) and silicon
semiconductor devices offer distinct advantages in power density and dynamic performance …

Implementing symmetrical structure in MOV-RCD snubber-based DC solid-state circuit breakers

S Zhao, R Kheirollahi, Y Wang… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
This article deals with metal-oxide varistor (MOV) and resistor–capacitor–diode (RCD)
snubber-based solid-state circuit breakers (SSCBs). There are two main contributions. First …

Analytical Method for RC Snubber Optimization Design to Eliminate Switching Oscillations of SiC MOSFET

X Yang, M Xu, Q Li, Z Wang… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
The switching oscillations caused by the high-speed switching and low-damping
characteristics of SiC mosfet seriously deteriorate its high-reliability applications. By viewing …

C-RC Snubber Optimization Design for Improving Switching Characteristics of SiC MOSFET

M Xu, X Yang, J Li - IEEE Transactions on Power Electronics, 2022 - ieeexplore.ieee.org
The switching oscillations and voltage overshoots excited by ultrafast switching transients
are urgently required to be overcome for SiC mosfet. Herein, the C-RC snubber is employed …

Overvoltage and oscillation suppression circuit with switching losses optimization and clamping energy feedback for SiC MOSFET

C Yang, Y Pei, L Wang, L Yu, F Zhang… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
The snubber circuit is a cost-effective solution to reduce the severe turn-off overvoltage and
oscillation caused by the fast switching characteristics of SiC MOSFET. However, the turn-on …

Computational Efficiency Analysis of SiC MOSFET Models in SPICE: Static Behavior

BW Nelson, AN Lemmon, BT DeBoi… - IEEE Open Journal …, 2020 - ieeexplore.ieee.org
Transient simulation of complex converter topologies is a challenging problem, especially in
detailed analysis tools like SPICE. Much of the recent literature on SPICE transistor …

[HTML][HTML] Performance improvement strategies for discrete wide bandgap devices: A systematic review

M Tahir, S Hu, X He - Frontiers in Energy Research, 2021 - frontiersin.org
Wide bandgap (WBG) devices are becoming increasingly popular due to their excellent
material properties. WBG devices are commercially available in discrete and module …

Investigation on optimal switching oscillation suppression for SiC MOSFET by inductively coupled damping

J Li, X Yang, M Xu, Y Ding, L Wang… - IEEE Journal of …, 2022 - ieeexplore.ieee.org
SiC MOSFET has been revolutionizing power electronics but producing more severe
switching oscillation due to its inherent faster switching speed and lower damping …

Computational efficiency analysis of SiC MOSFET models in SPICE: Dynamic behavior

BW Nelson, AN Lemmon, SJ Jimenez… - IEEE Open Journal …, 2021 - ieeexplore.ieee.org
Transient simulation of complex converter topologies is a challenging problem, especially in
detailed analysis tools like SPICE. Transistor models presented for SPICE are often …