Mid‐IR quantum cascade lasers: Device technology and non‐equilibrium Green's function modeling of electro‐optical characteristics
M Bugajski, P Gutowski, P Karbownik… - … status solidi (b), 2014 - Wiley Online Library
In this paper, we report the results of investigation of 9.5 µm AlGaAs/GaAs and strain
compensated 4.7 µm AlInAs/InGaAs/InP QCLs. We also show the results for 9.5 µm lasers …
compensated 4.7 µm AlInAs/InGaAs/InP QCLs. We also show the results for 9.5 µm lasers …
Quantum cascade lasers grown by MOCVD
Y Sun, G Cui, K Guo, J Zhang, N Zhuo… - Journal of …, 2023 - iopscience.iop.org
Sharing the advantages of high optical power, high efficiency and design flexibility in a
compact size, quantum cascade lasers (QCLs) are excellent mid-to-far infrared laser …
compact size, quantum cascade lasers (QCLs) are excellent mid-to-far infrared laser …
Optimization of growth conditions for InGaAs/InAlAs/InP quantum cascade lasers by metalorganic chemical vapor deposition
Y Huang, JH Ryou, RD Dupuis, C Pflügl… - Journal of Crystal …, 2011 - Elsevier
We investigate the growth conditions for lattice-matched InGaAs/InAlAs/InP quantum
cascade lasers (QCLs) by metalorganic chemical vapor deposition (MOCVD). Effect of …
cascade lasers (QCLs) by metalorganic chemical vapor deposition (MOCVD). Effect of …
Room-temperature operation of λ≈ 7.5 μm surface-plasmon quantum cascade lasers
We report the pulsed, room-temperature operation of λ≈ 7.5 μ m quantum cascade lasers
(QCLs) in which the optical mode is a surface-plasmon polariton excitation. Previously …
(QCLs) in which the optical mode is a surface-plasmon polariton excitation. Previously …
Strain-compensated GaInAs/AlInAs/InP quantum cascade laser materials
CA Wang, A Goyal, R Huang, J Donnelly… - Journal of Crystal …, 2010 - Elsevier
Strain-compensated (SC) GaInAs/AlInAs/InP multiple-quantum-well structures and quantum
cascade lasers (QCLs) with strain levels of 1% and as high as 1.5% were grown by …
cascade lasers (QCLs) with strain levels of 1% and as high as 1.5% were grown by …
OMVPE growth of highly strain-balanced GaInAs/AlInAs/InP for quantum cascade lasers
CA Wang, RK Huang, A Goyal, JP Donnelly… - Journal of Crystal …, 2008 - Elsevier
The growth and characterization of highly strain-balanced (SB) GaInAs/AlInAs/InP quantum-
well heterostructures for mid-infrared quantum cascade lasers (QCLs) are reported. Growth …
well heterostructures for mid-infrared quantum cascade lasers (QCLs) are reported. Growth …
High-performance distributed feedback quantum cascade lasers grown by metalorganic vapor phase epitaxy
We report the operation of distributed feedback quantum cascade lasers, grown by
metalorganic vapor phase epitaxy. Single-mode laser emission at 10.3 m and 7.8 m is …
metalorganic vapor phase epitaxy. Single-mode laser emission at 10.3 m and 7.8 m is …
[HTML][HTML] MOCVD Grown InGaAs/InAlAs Quantum Cascade Lasers Emitting at 7.7 μm
In this paper, we report the growth of high-quality In 0.59 Ga 0.41 As/In 0.37 Al 0.63 As strain-
balanced quantum cascade lasers (QCLs) in the low-pressure MOCVD production type multi …
balanced quantum cascade lasers (QCLs) in the low-pressure MOCVD production type multi …
High performance InP-based quantum cascade distributed feedback lasers with deeply etched lateral gratings
The fabrication and operating characteristics of lateral grating distributed feedback InP-
based quantum cascade lasers emitting at λ∼ 10 μ m are reported. High performance, room …
based quantum cascade lasers emitting at λ∼ 10 μ m are reported. High performance, room …
Driving up the quality of metal organic chemical vapor deposition-grown epitaxial wafers for highly innovative photonic applications
I Pasternak, W Kolkowski, J Jureńczyk… - Thin Solid Films, 2023 - Elsevier
Quantum cascade lasers (QCL) and extended InGaAs photodetectors (ex-PDs)(operating in
regime 1.9–2.6 µm wavelength) are very attractive materials for use in sophisticated …
regime 1.9–2.6 µm wavelength) are very attractive materials for use in sophisticated …