Advanced SiGe: C HBTs at cryogenic temperatures and their compact modeling with temperature scaling
The dc and ac performance of advanced SiGe: C heterojunction bipolar transistors (HBTs)
featuring transit frequency () and maximum oscillation frequency () of 300 and 500 GHz was …
featuring transit frequency () and maximum oscillation frequency () of 300 and 500 GHz was …
A physics-based analytical formulation for the tunneling current through the base of bipolar transistors operating at cryogenic temperatures
M Schröter, X Jin - IEEE Transactions on Electron Devices, 2022 - ieeexplore.ieee.org
A physics-based analytical solution for the direct tunneling current through the base region
of bipolar transistors operating at cryogenic temperatures (CTs) is derived. The obtained …
of bipolar transistors operating at cryogenic temperatures (CTs) is derived. The obtained …
Superconducting AC Machines and Cryogenic Power Electronics for Reliable and Power-Dense Energy Conversion
A Uosef, L Mantione, M Bassani… - 2024 International …, 2024 - ieeexplore.ieee.org
Implementing superconductivity in rotating electrical machines has many advantages such
as increased efficiency, smaller size, and lighter weight if compared to conventional …
as increased efficiency, smaller size, and lighter weight if compared to conventional …
66 GHz 11.5 mW low-power SiGe frequency quadrupler operating at 300 K and 4 K
A V-band (50–75 GHz) frequency quadrupler operating at both room temperature (300 K)
and cryogenic temperature (4 K) is presented. The circuit was realized in a 130-nm SiGe …
and cryogenic temperature (4 K) is presented. The circuit was realized in a 130-nm SiGe …
Operation of current mirrors in SiGe BiCMOS technology at cryogenic temperatures
Current mirrors (CMs) are essential building blocks for biasing electronic circuits. The
present work demonstrates that errors in mirroring ratios increase at cryogenic temperatures …
present work demonstrates that errors in mirroring ratios increase at cryogenic temperatures …
A Cryogenic 12 GHz Frequency Doubler with Temperature Compensation for Trapped-Ion Quantum Computer
This brief presents a frequency doubler (FD) for a microwave-control system intended for an
ion-trap-based quantum computer. The circuit is optimized for frequency multiplication from …
ion-trap-based quantum computer. The circuit is optimized for frequency multiplication from …
The SiGe HBT at Cryogenic Temperatures: Invited Pager
JD Cressler - 2023 IEEE BiCMOS and Compound …, 2023 - ieeexplore.ieee.org
The SiGe HBT at Cryogenic Temperatures: Invited Pager Page 1 The SiGe HBT at Cryogenic
Temperatures John D. Cressler1 Invited Paper 1 School of Electrical and Computer Engineering …
Temperatures John D. Cressler1 Invited Paper 1 School of Electrical and Computer Engineering …
[HTML][HTML] Characterization and compact modeling of silicon-germanium heterojunction bipolar transistors from room to cryogenic temperatures
X Jin - 2024 - tud.qucosa.de
Kurzfassung Silizium-Germanium (SiGe) Heterojunction-Bipolartransistoren (HBTs) werden
aufgrund ihrer hohen Verstärkung und Geschwindigkeit sowie der Integration in die …
aufgrund ihrer hohen Verstärkung und Geschwindigkeit sowie der Integration in die …
Cryogenic Investigation of a 13 GHz Power Amplifier for Trapped-Ion Quantum Computer
This work presents an in-depth investigation of the cryogenic applicability of a power
amplifier (PA) from simulative and operative viewpoint. A method is introduced for gaining …
amplifier (PA) from simulative and operative viewpoint. A method is introduced for gaining …
Two Port Scattering Parameters Measurements and De-Embedding in Cryostat from 300 K down to 20 K
F Bogdanović, A Tabaković, Ž Osrečki… - 2024 47th MIPRO …, 2024 - ieeexplore.ieee.org
Several methods of de-embedding scattering parameters (S-parameters) at cryogenic
temperatures (CT) are compared. The optimal one that was selected is 12-term error short …
temperatures (CT) are compared. The optimal one that was selected is 12-term error short …